Exposure method, exposure apparatus, and device manufacturing method

ABSTRACT

An exposure method comprises: forming an immersion region on a substrate; exposing the substrate by irradiating the substrate with an exposure light via a liquid of the immersion region; and preventing an integration value of a contact time during which the liquid of the immersion region and a first region on the substrate are in contact, from exceeding a predetermined tolerance value.

TECHNICAL FIELD

The present invention relates to an exposure method, an exposureapparatus, and a device manufacturing method, with which a substrate isexposed via a liquid.

Priority is claimed on Japanese Patent Application No. 2005-131866,filed Apr. 28, 2005, the content of which is incorporated herein byreference.

BACKGROUND ART

In a photolithography process, which is a manufacturing process formicro-devices (electronic devices etc.), such as liquid crystal displaydevices and the like, an exposure apparatus is used which projects andexposes a pattern, formed on a mask, onto a photosensitive substrate.This exposure apparatus includes a mask stage that holds the mask and asubstrate stage that holds the substrate, and the exposure apparatusprojects and exposes the pattern of the mask onto the substrate via aprojection optical system while successively moving the mask stage andthe substrate stage. In the manufacture of a micro-device, the patternformed on the substrate must be made fine in order to increase thedensity of the device. To address this need, even higher resolution ofthe exposure apparatus is desired. As a means for realizing this higherresolution, there is proposed a liquid immersion exposure apparatus asdisclosed in Patent Document 1, in which an immersion region of a liquidis formed on a substrate and the substrate is exposed via the liquid ofthe immersion region.

Patent Document 1: PCT International Patent Publication No. WO 99/49504

DISCLOSURE OF INVENTION Problems to be Solved by the Invention

However, with the immersion exposure apparatus, the liquid may applyinfluences on the substrate through contact of the liquid with thesubstrate, and the forming of a desired pattern on the substrate may bedisabled by these influences. Also, as disclosed in European PatentPublication No. 1519231, pattern sizes (line widths, etc.) may depend onthe duration of contact with the liquid.

A purpose of some aspects of the invention is to provide an exposuremethod, an exposure apparatus, and a device manufacturing method thatenable a predetermined pattern to be formed on a substrate even when aliquid immersion method is employed.

Means for Solving the Problem

According to a first aspect of the present invention, there is providedan exposure method, including: forming an immersion region on asubstrate; exposing the substrate by irradiating the substrate with anexposure light via a liquid of the immersion region; and preventing anintegration value of a contact time during which the liquid of theimmersion region and a first region on the substrate are in contact,from exceeding a predetermined tolerance value.

According to the first aspect of the present invention, by preventingthe integration value of the contact time during which the liquid of theimmersion region and a first region on the substrate are in contact,from exceeding the predetermined tolerance value, a predeterminedpattern can be formed on the substrate even if the liquid contacts thesubstrate.

According to a second aspect of the present invention, there is providedan exposure method, including: forming an immersion region on thesubstrate; exposing the substrate via a liquid of the immersion region;and preventing a stationary time during which at least a portion of theimmersion region is stationary on the substrate, from exceeding apredetermined tolerance value.

According to the second aspect of the present invention, by preventingthe stationary time during which at least a portion (edge, etc.) of theimmersion region is stationary on the substrate, from exceeding thepredetermined tolerance value, a predetermined pattern can be formed onthe substrate even if the liquid contacts the substrate.

According to a third aspect of the present invention, there is provideda device manufacturing method that employs the exposure method of eitherof the above-described aspects.

According to the third aspect of the present invention, degradation of apattern formed on the substrate can be suppressed to manufacture adevice of a desired performance.

According to a fourth aspect of the present invention, there is providedan exposure apparatus that exposes a substrate via an immersion region,including: an immersion mechanism that forms the immersion region; and acontrol apparatus that prevents an integration value of a contact timeduring which a liquid of the immersion region and a predetermined regionon the substrate are in contact, from exceeding a predeterminedtolerance value.

According to the fourth aspect of the present invention, by preventingthe integration value of the contact time during which the liquid of theimmersion region and a predetermined region on the substrate are incontact, from exceeding the predetermined tolerance value, apredetermined pattern can be formed on the substrate even if the liquidcontacts the substrate.

According to a fifth aspect of the present invention, there is providedan exposure apparatus for exposing a substrate via an immersion region,including: an immersion mechanism that forms the immersion region; and acontrol apparatus that prevents a stationary time during which at leasta portion of the immersion region is stationary on the substrate, fromexceeding a predetermined tolerance value.

According to the fifth aspect of the present invention, by preventingthe stationary time during which at least a portion (edge, etc.) of theimmersion region is stationary on the substrate, from exceeding thepredetermined tolerance value, a predetermined pattern can be formed onthe substrate even if the liquid contacts the substrate.

According to a sixth aspect of the present invention, there is provideda device manufacturing method that employs the exposure apparatus ofeither of the above-described aspects.

According to the sixth aspect of the present invention, degradation of apattern formed on the substrate can be suppressed to manufacture adevice of a desired performance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram showing an embodiment of an exposureapparatus.

FIG. 2 is a view from above of a substrate stage and a measurementstage.

FIG. 3 is a diagram showing a manner in which an immersion region moveson the substrate stage and the measurement stage.

FIG. 4 is a plan view for explaining an example of operation of theexposure apparatus.

FIG. 5 is a plan view for explaining an example of operation of theexposure apparatus.

FIG. 6 is a plan view for explaining an example of operation of theexposure apparatus.

FIG. 7 is a diagram for explaining a positional relationship between asubstrate and an exposure light during exposure of shot regions on thesubstrate.

FIG. 8 is a sectional side view of a state in which the immersion regionis formed on the substrate.

FIG. 9 is a flowchart for explaining an embodiment of an exposuremethod.

FIG. 10 is a diagram for explaining a detection apparatus that detectsthe state of the immersion region.

FIG. 11 is a diagram for explaining movement conditions of thesubstrate.

FIG. 12 is a diagram for explaining movement conditions of thesubstrate.

FIG. 13 is a diagram showing a manner in which foreign matter becomesattached onto the substrate at a portion corresponding to the positionof an edge of the immersion region.

FIG. 14 is a sectional side view for explaining a state in which theimmersion region has moved onto an upper surface of the substrate stage.

FIG. 15 is a sectional side view for explaining an example of operationof an immersion mechanism.

FIG. 16 is a diagram showing an example of the shape of the immersionregion.

FIG. 17 is a diagram showing another embodiment of a nozzle member.

FIG. 18A is a diagram showing another embodiment of a mask.

FIG. 18B is a diagram showing another embodiment of a mask.

FIG. 19 is a plan view for explaining an example of an exposureoperation.

FIG. 20 is a plan view for explaining an example of an exposureoperation.

FIG. 21 is a plan view for explaining an example of an exposureoperation.

FIG. 22 is a plan view for explaining an example of an exposureoperation.

FIG. 23 is a flowchart for explaining an example of manufacturing stepsfor a micro device.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereunder is a description of embodiments of the present invention withreference to the drawings. However, the present invention is not limitedto this description.

First Embodiment

FIG. 1 is a schematic block diagram showing an embodiment of an exposureapparatus EX. In FIG. 1, the exposure apparatus EX includes: a maskstage MST, capable of holding and moving a mask M; a substrate stageST1, capable of moving while holding a substrate P; a measurement stageST2, capable of moving while carrying at least a portion of a measuringinstrument for making measurements related to an exposure process; anillumination optical system IL for illuminating an exposure light ELonto the mask M on the mask stage MST; a projection optical system PLfor projecting a pattern image of the mask M, illuminated by theexposure light EL, onto the substrate P on the substrate stage ST1; anda control apparatus CONT for controlling operations of the entireexposure apparatus EX. A storage apparatus MRY, storing informationrelated to the exposure process, and a display apparatus DY, displayinginformation related to the exposure process, are connected to thecontrol apparatus CONT. The substrate stage ST1 and the measurementstage ST2 are respectively movable independent of each other on a basemember BP at an image plane side of the projection optical system PL.The exposure apparatus EX further includes a conveying apparatus H thattransfers the substrate P, in other words, loads the substrate P ontothe substrate stage ST1 and unloads the substrate P from the substratestage ST1. Although the loading and unloading of the substrate P may beperformed at different positions, in the present embodiment, the loadingand unloading of the substrate P are performed at the same position(RP).

The exposure apparatus EX of the present embodiment is an immersionexposure apparatus applicable to an immersion method for substantiallyshortening the exposure wavelength and thereby improving the resolutionand also, substantially expanding the depth of focus, and includes atleast: an immersion mechanism 1 that fills an optical path space K1 ofthe exposure light EL, between at least a final optical element LS1,which, among a plurality of optical elements constituting the projectionoptical system PL, is closest to the image plane of the projectionoptical system PL, and an object (at least a portion of the substrate P,the substrate stage ST1, and the measurement stage ST2), disposed at theimage plane side of the projection optical system PL, with a liquid LQto make this optical path space K1 of the exposure light EL an immersedspace and thereby forming an immersion region LR of the liquid LQ on theobject. Operations of the immersion mechanism 1 are controlled by thecontrol apparatus CONT.

The immersion mechanism 1 includes: a nozzle member 70, disposed nearthe image plane of the projection optical system PL and having supplyports 12, for supplying the liquid LQ, and collection ports 22, forrecovering the liquid LQ; a liquid supply apparatus 11 for supplying theliquid LQ to the image plane side of the projection optical system PLvia a supply pipe 13 and the supply ports 12 provided in the nozzlemember 70; and a liquid recovery apparatus 21 for recovering the liquidLQ at the image plane side of the projection optical system PL via thecollection ports 22, provided in the nozzle member 70, and a recoverypipe 23.

Although in the description that follows, a case where the immersionregion LR is formed on a portion of the substrate P may be described,the immersion region LR is formed on an object, disposed at a positionopposite the final optical element LS1 and at the image plane side ofthe projection optical system PL, in other words, on at least a portionof the substrate P, an upper surface F1 of the substrate stage ST1, andan upper surface F2 of the measurement stage ST2.

In the present embodiment, the exposure apparatus EX adopts a localliquid immersion method where the immersion region LR of the liquid LQ,which is greater than a projection region AR of the projection opticalsystem PL and smaller than the substrate P, is formed locally on apartial region on the substrate P that includes the projection regionAR. The exposure apparatus EX uses the immersion mechanism 1 to fill theoptical path space K1 of the exposure light EL, between the finaloptical element LS1, closest to the image plane of the projectionoptical system PL, and the substrate P, disposed at the image plane sideof the projection optical system PL, with the liquid LQ to locally formthe immersion region LR of the liquid LQ on a partial region on thesubstrate P at least while the pattern image of the mask M is beingprojected onto the substrate P and illuminates the exposure light EL,which has passed through the mask M, via the projection optical systemPL and the liquid LQ to project and expose the pattern image of the maskM onto the substrate P. By using the liquid supply apparatus 11 of theimmersion mechanism 1 to supply a predetermined amount of the liquid LQand using the liquid recovery apparatus 21 to recover a predeterminedamount of the liquid LQ, the control apparatus CONT fills the opticalpath space K1 with the liquid LQ and locally forms the immersion regionLR of the liquid LQ on a partial region of the substrate P. Theimmersion region LR, formed by the liquid LQ filled in the optical pathspace K1, is formed along the optical path of the exposure light EL.

With the present embodiment, a case where a scan type exposure apparatus(so-called scanning stepper), which exposes the pattern, formed on themask M, onto the substrate P while synchronously moving the mask M andthe substrate P, is used as the exposure apparatus EX shall be describedas an example. In the following description, a direction of synchronousmovement (scan direction) of the mask M and the substrate P within ahorizontal plane shall be referred to as the Y-axis direction, adirection (non-scan direction) orthogonal to the Y-axis direction in thehorizontal plane shall be referred to as the X-axis direction, and adirection orthogonal to both the X-axis direction and the Y-axisdirection (in the present example, a direction parallel to an opticalaxis AX of the projection optical system PL) shall be referred to as theZ-axis direction. Furthermore, rotation (inclination) directions aboutthe X-axis, the Y-axis and the Z-axis shall be referred to as the θX,the θY, and the θZ directions, respectively. In the present description,“substrate” refers inclusively to semiconductor wafers and othersubstrates on which a photosensitive material (resist), protective film,or other film has been coated. “Mask” refers inclusively to reticles,having device patterns, to be reduction-projected onto the substrate,formed thereon.

The illumination optical system IL includes: an exposure light sourcethat emits the exposure light EL; an optical integrator that makesuniform the luminance of the exposure light EL emitted from the exposurelight source; a condenser lens that converges the exposure light EL fromthe optical integrator; a relay lens system; a field stop that sets anillumination region of the exposure light EL on the mask M; etc. Theillumination optical system IL illuminates the predeterminedillumination region on the mask M with the exposure light EL of auniform luminance distribution. As the exposure light EL emitted fromexposure light source IL, for example, emission lines (g line, h line, iline) emitted, for example, from a mercury lamp, deep ultraviolet light(DUV light), such as KrF excimer laser light (wavelength: 248 nm), orvacuum ultraviolet light (VUV light), such as ArF excimer laser light(wavelength: 193 nm) or F₂ laser light (wavelength: 157 nm), is used. Inthis embodiment, ArF excimer laser light is used.

In the present embodiment, pure water is used as the liquid LQ suppliedfrom the liquid supply apparatus 11. Pure water can transmit not onlyArF excimer laser light but can also, transmit, for example, theemission lines (g line, h line, i line) emitted from a mercury lamp anddeep ultraviolet light (DUV light), such as KrF excimer laser light(wavelength: 248 nm).

The mask stage MST can move while holding the mask M. The mask stage MSTholds the mask M, for example, by vacuum suction. The mask stage MST ismovable two-dimensionally within a plane perpendicular to the opticalaxis AX of the projection optical system PL, that is, within the X-Yplane, and is micro-rotatable in the θZ direction. The mask stage MST isdriven by a mask stage drive apparatus MD that includes a linear motor,etc. The mask stage drive apparatus MD is controlled by the controlapparatus CONT. A movement mirror 51 is disposed on the mask stage MST.Also, a laser interferometer 52 is disposed at a predetermined position.The position in the two-dimensional directions and the rotation angle inthe θZ direction (and, in some cases, the rotation angles in the θX andθY directions) of the mask M on the mask stage MST are measured in realtime by the laser interferometer 52 using the movement mirror 51. Themeasurement results of the laser interferometer 52 are output to thecontrol apparatus CONT. The control apparatus CONT drives the mask stagedrive apparatus MD based on the measurement results of the laserinterferometer 52 to perform positional control of the mask M held onthe mask stage MST.

The movement mirror 51 may not only be a plane mirror but may also, be acorner cube (retroreflector), and instead of fixing the movement mirror51 on the mask stage MST, for example, a reflecting surface, formed bymirror polishing an end face (side face) of the mask stage MST, may beused. Furthermore, the mask stage MST may be of an arrangement capableof coarse/fine movement as disclosed for example in Japanese UnexaminedPatent Application Publication No. H08-130179 (corresponding U.S. Pat.No. 6,721,034).

The projection optical system PL projects the pattern image of the maskM onto the substrate P at a predetermined projection magnification β,and has a plurality of optical elements, and these optical elements areheld in a lens barrel PK. In the present embodiment, the projectionoptical system PL is a reduction system with a projection magnificationβ, for example, of ¼, ⅕, or ⅛, and forms a reduced image of the maskpattern on the projection region AR that is conjugate to theaforementioned illumination region. The projection optical system PL maybe a reduction system, an equal-size magnification system, or amagnification system. Furthermore, the projection optical system PL maybe any one of: a refractive system that does not include a reflectionoptical element, a reflection system that does not include a refractiveoptical element, or a catadioptric system that includes a reflectionoptical element and a refractive optical element. In the presentembodiment, of the plurality of optical elements constituting theprojection optical system PL, only the final optical element LS1, whichis closest to the image plane of the projection optical system PL, makescontact with the liquid LQ supplied to the optical path space K1.

The substrate stage ST1 has a substrate holder PH for holding thesubstrate P, and is capable of moving while holding the substrate P onthe substrate holder PH. The substrate holder PH holds the substrate P,for example, by vacuum suction. A recess portion 58 is provided on thesubstrate stage ST1, and the substrate holder PH for holding thesubstrate P is disposed in the recess portion 58. The upper surface F1of the substrate stage ST1 other than the recess portion 58 is a flatsurface of approximately the same height as (flush with) a top surfaceof the substrate P, which is held by the substrate holder PH. This isbecause, for example, a portion of the immersion region LR may protrudebeyond the top surface of the substrate P and be formed on the uppersurface F1 during the exposure operation of the substrate P. Just aportion of the upper surface F1 of the substrate stage ST1, for example,a predetermined region surrounding the substrate P (and including therange of protrusion of the immersion region LR), may be madeapproximately the same in height as the top surface of the substrate P.Furthermore, if the optical path space K1 on the image plane side of theprojection optical system PL can be kept filled with the liquid LQ (thatis, if the immersion region LR can be maintained favorably), then theremay be a step between the top surface of the substrate P, which is heldby the substrate holder PH, and the upper surface F1 of the substratestage ST1. Furthermore, although the substrate holder PH may be formedintegral to a portion of the substrate stage ST1, in the presentembodiment, the substrate holder PH and the substrate stage ST1 arearranged separately, and the substrate holder PH is secured in therecess portion 58, for example, by vacuum suction.

By being driven by a substrate stage drive apparatus SD1, which includesa linear motor, etc., controlled by the control apparatus CONT, thesubstrate stage ST1 can move two-dimensionally within the X-Y plane andmicro-rotate in the θZ direction on the base member BP while holding thesubstrate P via the substrate holder PH. The substrate stage ST1 canfurthermore move in the Z-axis direction, the θX direction, and the θYdirection. The top surface of the substrate P held by the substratestage ST1 is thus moveable in the directions of six degrees of freedomof: the X-axis, Y-axis, Z-axis, θX, θY and θZ directions. A movementmirror 53 is disposed on a side face of the substrate stage ST1. Also, alaser interferometer 54 is disposed at a predetermined position. Theposition in two-dimensional directions and the rotation angles of thesubstrate P on the substrate stage ST1 are measured in real time by thelaser interferometer 54 using the movement mirror 53. Also, althoughunillustrated, the exposure apparatus EX has a focus leveling detectionsystem that detects planar position information of the top surface ofthe substrate P held by the substrate stage ST1.

The measurement results of the laser interferometer 54 are output to thecontrol apparatus CONT. The detection results of the focus levelingdetection system are also, output to the control apparatus CONT. Thecontrol apparatus CONT drives the substrate stage drive apparatus SD1based on the detection results of the focus leveling detection system tocontrol a focus position (Z position) and inclination angles (θX, θY) ofthe substrate P to thereby adjust the positional relationship of the topsurface of the substrate P and the image plane, formed via theprojection optical system PL and the liquid LQ, and drives the substratestage drive apparatus SD1 based on the measurement results of the laserinterferometer 54 to perform positional control of the substrate P inthe X-axis direction, Y-axis direction, and θZ direction.

The laser interferometer 54 may also, be capable of measuring theposition of the substrate stage ST1 in the Z-axis direction and therotation information in the OX and the θY directions, and furtherdetails thereof are disclosed, for example, in Japanese Translation No.2001-510577 of PCT International Publication (corresponding PCTInternational Publication No. WO 1999/28790). Furthermore, instead offixing the movement mirror 53 to the substrate stage ST1, for example, areflecting surface, formed by mirror polishing a portion (side face,etc.) of the substrate stage ST1, may be used.

Also, the focus leveling detection system detects inclinationinformation (rotation angles) in the θX and θY directions of thesubstrate P by measuring Z-axis direction position information of thesubstrate P at a plurality of measurement points, and at least a portionof the plurality of measurement points may be set within the immersionregion LR (or the projection region AR), or all of the measurementpoints may be set outside the immersion region LR. Furthermore, when forexample the laser interferometer 54 is capable of measuring the positioninformation in the Z-axis, θX, and θY directions of the substrate P, thefocus leveling detection system does not have to be provided to enablemeasurement of the Z-axis direction position information of thesubstrate P during the exposure operation, and arrangements may be madeto perform positional control of the substrate P in regard to Z-axis,θX, and θY directions using the measurement results of the laserinterferometer 54 at least during the exposure operation.

The measurement stage ST2 has installed thereon various measuringinstruments (including measuring members) for making measurementsrelated to the exposure process and is movably disposed on the basemember BP at the image plane side of the projection optical system PL.The measurement stage ST2 is driven by a measurement stage driveapparatus SD2. The measurement stage drive apparatus SD2 is controlledby the control apparatus CONT. The control apparatus CONT can move eachof the substrate stage ST1 and the measurement stage ST2 independentlyof each other on the base member BP via the stage drive apparatuses SD1and SD2, respectively. The measurement stage drive apparatus SD2 has anarrangement equivalent to the substrate stage drive apparatus SD1, andlike the substrate stage ST1, the measurement stage ST2 is enabled tomove in each of the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions bythe measurement stage drive apparatus SD2. Also, a movement mirror 55 isdisposed on a side face of the measurement stage ST2, and a laserinterferometer 56 is disposed at a predetermined position. The positionin two-dimensional directions and the rotation angles of the measurementstage ST2 are measured in real time by the laser interferometer 56 usingthe movement mirror 55, and the control apparatus CONT controls theposition of the measurement stage ST2 based on the measurement resultsof the laser interferometer 56. The laser interferometer 56 may also, bearranged to be capable of measuring the Z-axis direction position andthe θX and θY direction rotation information of the measurement stageST2. Also, instead of fixing the movement mirror 55 to the measurementstage ST2, for example, a reflecting surface, formed by mirror polishinga portion (side face, etc.) of the measurement stage ST2, may be used.

As examples of the measuring instruments installed on the measurementstage ST2, a reference mark plate, having a plurality of reference marksformed thereon, such as disclosed in Japanese Unexamined PatentApplication Publication No. H05-21314 (corresponding U.S. Pat. No.RE36,730), a non-uniformity sensor for measuring non-uniformity ofilluminance, such as disclosed in Japanese Unexamined Patent ApplicationPublication No. S57-117238 (corresponding U.S. Pat. No. RE32,795), anon-uniformity sensor for measuring variation of transmittance of theexposure light EL of the projection optical system PL, such as disclosedin Japanese Unexamined Patent Application Publication No. 2001-267239(corresponding U.S. Pat. No. 6,721,039), an aerial image measurementsensor, such as disclosed in Japanese Unexamined Patent ApplicationPublication No. 2002-14005 and Japanese Unexamined Patent ApplicationPublication No. 2002-198303 (corresponding U.S. Patent ApplicationPublication No. 2002/0041377A1), and an illumination amount sensor(illuminance sensor), such as disclosed in Japanese Unexamined PatentApplication Publication No. H11-16816 (corresponding U.S. PatentApplication Publication No. 2002/0061469A1), can be cited. A wavefrontaberration measuring apparatus, such as disclosed in PCT InternationalPatent Publication No. WO 99/60361 (corresponding U.S. Pat. No.6,819,414), Japanese Unexamined Patent Application Publication No.2002-71514, U.S. Pat. No. 6,650,399, etc., a reflection unit, such asdisclosed in Japanese Unexamined Patent Application Publication No.S62-183522 (corresponding U.S. Pat. No. 4,780,747), etc., can also, becited as examples of the measuring instruments installed on themeasurement stage ST2. The measurement stage ST2 is thus a dedicatedstage for performing a measurement process related to the exposureprocess and is configured so as not to hold the substrate P, and thesubstrate stage ST1 is configured so as not to have measuringinstruments for performing measurements related to the exposure processinstalled thereon. An exposure apparatus that includes such ameasurement stage is disclosed in more detail, for example, in JapaneseUnexamined Patent Application Publication No. H11-135400 (correspondingPCT International Patent Publication No. WO 1999/23692), JapaneseUnexamined Patent Application Publication No. 2000-164504 (correspondingU.S. Pat. No. 6,897,963), etc. In the present embodiment, an observationapparatus for observing the state of the immersion region LR is also,installed on the measurement stage ST2.

Not all of the abovementioned measuring instruments need to be installedon the measurement stage ST2 and just a portion of the measuringinstruments may be installed as needed. Furthermore, a portion of themeasuring instruments necessary for the exposure apparatus EX may beinstalled on the measurement stage ST2 and the remaining portion may beinstalled on the substrate stage ST1. Also, just a portion of therespective measuring instruments mentioned above may be installed on themeasurement stage ST2 or the substrate stage ST1 and the remainingportion may be disposed externally or on another member.

Near a front end of the projection optical system PL is disposed anoff-axis type alignment system ALG that detects an alignment mark on thesubstrate P, a reference mark on a reference mark plate disposed on themeasurement stage ST2, etc. With the alignment system ALG of the presentembodiment, as disclosed in for example Japanese Unexamined PatentApplication Publication No. H04-65603 (corresponding to U.S. Pat. No.5,995,234), an FIA (field image alignment) method is employed whereby abroadband detection light, which does not photosensitize thephotosensitive material on the substrate P, is illuminated onto anobject mark, an image of the object mark, formed on a light receivingsurface by reflected light from the object mark, and an image of anunillustrated index (an index pattern on a index plate disposed insidethe alignment system ALG) are captured using an image pickup device(CCD, etc.), and the position of the mark is measured by imageprocessing the image pickup signals. In the present embodiment, thealignment system ALG can detect the alignment mark on the substrate Pand the reference mark on the reference mark plate without interventionof the liquid LQ.

The immersion mechanism 1 shall now be described. The liquid supplyapparatus 11 of the immersion mechanism 1 supplies the liquid LQ to fillthe optical path space K1 at the light emitting side of the finaloptical element LS1 and includes a tank for containing the liquid LQ, apressurizing pump, a temperature adjustment apparatus for adjusting thetemperature of the liquid LQ to be supplied, a degasifier for reducinggas components inside the liquid LQ to be supplied, a filter unit forremoving foreign matter in the liquid LQ, etc. One end of the supplypipe 13 is connected to the liquid supply apparatus 11, and the otherend of the supply pipe 13 is connected to the nozzle member 70. Theliquid supplying operation of the liquid supply apparatus 11 iscontrolled by the control apparatus CONT. The exposure apparatus EX doesnot have to be equipped with all of the tank, pressurizing pump,temperature adjustment apparatus, degasifier, filter unit, etc., of theliquid supply apparatus 11, and equipment of a plant, etc., in which theexposure apparatus EX is installed, may be used in place of any of thesecomponents.

The liquid recovery apparatus 21 of the immersion mechanism 1 is forrecovering the liquid LQ filled in the optical path space K1 at thelight emitting side of the final optical element LS1, and includes avacuum system, such as a vacuum pump, etc., a gas/liquid separator forseparating the recovered liquid LQ and gas, a tank for containing therecovered liquid LQ, etc. One end of the recovery pipe 23 is connectedto the liquid recovery apparatus 21, and the other end of the recoverypipe 23 is connected to the nozzle member 70. The liquid recoveryoperation of the liquid recovery apparatus 21 is controlled by thecontrol apparatus CONT. The exposure apparatus EX does not have to beequipped with all of the vacuum system, gas/liquid separator, tank,etc., of the liquid recovery apparatus 21, and equipment of a plant,etc., in which the exposure apparatus EX is installed, may be used inplace of any of these components.

The supply ports 12 for supplying the liquid LQ and the collection ports22 for recovering the liquid LQ are formed on a bottom surface of thenozzle member 70. The bottom surface of the nozzle member 70 is setpractically parallel to the X-Y plane, opposes the projection opticalsystem PL (final optical element LS1), and the position thereof is setso that when the substrate stage ST1 (or the measurement stage ST2) ispositioned, a predetermined gap is formed with respect to either or bothof the upper surface F1 and the top surface of the substrate P (or theupper surface F2). The nozzle member 70 is an annular member that isdisposed so as to surround a side face of at least one optical element(the final optical element LS1 in the present example) disposed at theimage plane side of the projection optical system PL, and the pluralityof supply ports 12 are disposed at the bottom surface of the nozzlemember 70 so as to surround the optical path space K1. The collectionports 22 are disposed at the outer side of (and away from) the supplyports 12 with respect to the optical path space K1 at the bottom surfaceof the nozzle member 70 and are disposed in an annular manner so as tosurround the optical path space K1 (final optical element LS1) and thesupply ports 12. Porous members are provided in the collection ports 22of the present embodiment. Each porous member is constituted, forexample, of a porous ceramic body or a plate-like mesh made of titaniumor stainless steel (for example, SUS 316).

The control apparatus CONT supplies a predetermined amount of the liquidLQ by means of the liquid supply apparatus 11 of the immersion mechanism1 and recovers a predetermined amount of the liquid LQ using the liquidrecovery apparatus 21 of the immersion mechanism 1 to fill the opticalpath space K1 with the liquid LQ and thereby locally form the immersionregion LR of the liquid LQ. In forming the immersion region LR of theliquid LQ, the control apparatus CONT drives each of the liquid supplyapparatus 11 and the liquid recovery apparatus 21 of the immersionmechanism 1. When the liquid LQ is fed out from the liquid supplyapparatus 11 under the control of the control apparatus CONT, the liquidLQ fed out from the liquid supply apparatus 11 flows through the supplypipe 13 and is thereafter supplied, via a supply passage (internalpassage), formed in the interior of the nozzle member 70, and from thesupply ports 12, to the optical path space K1 at the image plane side ofthe projection optical system PL. Also, when the liquid recoveryapparatus 21 is driven under the control of the control apparatus CONT,the liquid LQ, in the optical path space K1 at the image plane side ofthe projection optical system PL flows via the collection ports 22 intoa recovery passage (internal passage), formed in the interior of thenozzle member 70, and, after flowing through the recovery pipe 23 isrecovered in the liquid recovery apparatus 21.

The embodiment of the immersion mechanism 1 (immersion space formingmember) that includes the nozzle member 70 is not restricted to thatdescribed above and, for example, a nozzle member disclosed in PCTInternational Patent Publication No. WO 2004/086468 (corresponding U.S.Patent Application Publication No. 2005/0280791A1), Japanese UnexaminedPatent Application Publication No. 2004-289126 (corresponding U.S. Pat.No. 6,952,253), etc., may be used instead. Specifically, although in thepresent embodiment, the bottom surface of the nozzle member 70 is set atsubstantially the same height (Z position) as the bottom surface (lightemitting surface) of the projection optical system PL, the bottomsurface of the nozzle member 70 may, for example, be set at the imageplane side (substrate side) of the lower end surface of the projectionoptical system PL instead. In this case, a portion (bottom end) of thenozzle member 70 may be disposed so as to extend below the bottom sideof the projection optical system PL (the final optical element LS1) soas not to obstruct the exposure light EL. Also, although in the presentembodiment, the supply ports 12 are provided on the bottom surface ofthe nozzle member 70, the supply ports 12 may instead be provided, forexample, on inner faces (inclined faces) of the nozzle member 70 thatoppose the side face of the final optical element LS1 of the projectionoptical system PL.

FIG. 2 is a plan view of the substrate stage ST1 and the measurementstage ST2 as viewed from above. To simplify the description, only anupper plate 400 that constitutes a portion of an aerial imagemeasurement sensor is shown on the measurement stage ST2 in FIG. 2.

The aerial image measurement sensor is used to measure image formingcharacteristics (optical characteristics) of the projection opticalsystem PL in the state in which the optical path space K1 is filled withthe liquid LQ, and includes the upper plate 400, disposed on themeasurement stage ST2, a light receiving element (optical sensor, notshown in the figures) constituted of a photoelectric conversion element,an optical system (not shown in the figures), which introduces lightthat has passed through the upper plate 400 to the light receivingelement, etc.

An upper surface of the upper plate 400 of the spatial image measurementsensor is substantially flush with the upper surface of the measurementstage ST2. In the description that follows, the upper surface of themeasurement stage ST2, including the upper surface of the upper plate400 of the spatial image measurement sensor, shall be referred to as the“upper surface F2” where suitable. Preferably, the upper surface F2 ofthe measurement stage ST2 exhibits liquid repellency against the liquidLQ2.

As shown in FIG. 3, the control apparatus CONT can bring the substratestage ST1 and the measurement stage ST2 in contact with or close to eachother, and can control (adjust) the upper surface F1 of the substratestage ST1 and the upper surface F2 of the measurement stage ST2 to be atsubstantially the same height position by driving, for example, at leastone of either of the stages ST1 and ST2 in (either or both of the θX andθY directions and) the Z-axis direction. Also, as shown in FIG. 3, theimmersion region LR, formed at the light emitting side of the finaloptical element LS1 of the projection optical system PL by the immersionmechanism 1, is movable across the substrate stage ST1 and themeasurement stage ST2. In moving the immersion region LR, the controlapparatus CONT uses the stage drive apparatuses SD1 and SD2 to move thesubstrate stage ST1 and the measurement stage ST2 together within theX-Y plane with an edge of the upper surface F1 of the substrate stageST1 and an edge of the upper surface F2 of the measurement stage ST2being brought into contact with or close to each other. The immersionregion LR can thereby be moved across the substrate stage ST1 and themeasurement stage ST2 with the optical path space K1 of the projectionoptical system PL being filled with the liquid LQ and while suppressingoutflow of the liquid LQ from a gap between the substrate stage ST1 andthe measurement stage ST2. In this process, the substrate stage ST1 andthe measurement stage ST2 are driven in parallel with the upper surfacesF1 and F2 thereof being set at substantially the same height (Zposition).

An example of a method of exposing the substrate P using the exposureapparatus EX with the above-described arrangement shall now bedescribed. First, an example of operations of the substrate stage ST1and the measurement stage ST2 shall be described with reference to FIGS.4 to 7. FIGS. 4 to 6 are views of the substrate stage ST1 and themeasurement stage ST2 as viewed from above, and FIG. 7 is a view of thesubstrate stage ST1 as viewed from above.

In the description that follows, it shall be deemed that by theimmersion mechanism 1, the operation of supplying the liquid LQ to theoptical path space K1 and the operation of recovering the liquid LQ ofthe optical path space K1 are performed continuously in parallel so thatthe liquid LQ is constantly maintained in the optical path space K1 atthe image plane side of the projection optical system PL.

A state, in which the immersion region LR is formed on the measurementstage ST2, and the substrate stage ST1 is positioned at a substrateexchange position RP to perform a substrate exchange operation, is shownin FIG. 4.

In FIG. 4, the control apparatus CONT uses the conveying apparatus H tounload (convey out) a substrate, which has been subject to the exposureprocess, from the substrate stage ST1, and load (convey in) thesubstrate P, to be subject to the exposure process next, onto thesubstrate stage ST1.

During the substrate exchange operation at the substrate stage ST1, thecontrol apparatus CONT executes a measurement operation via the liquidLQ using the aerial image measurement sensor installed on themeasurement stage ST2. As shown in FIG. 4, the control apparatus CONTforms the immersion region LR on the upper plate 400 on the measurementstage ST2. In this state, the aerial image measurement sensor receives,via a light transmitting portion formed on the upper plate 400, theexposure light EL that has passed through the liquid LQ between theprojection optical system PL and the upper plate 400 and performsmeasurement of the image forming characteristics of the projectionoptical system PL. During the substrate exchange operation, othermeasurement operations, such as a baseline measurement, using areference mark plate (not shown in the figures) installed on themeasurement stage ST2, a transmittance measurement, using anon-uniformity sensor (not shown in the figures), may be executed. Themeasurement operation that is executed is not restricted to a singleoperation and a plurality of measurement operations may be executed.

Based on the measurement results, the control apparatus CONT executes,for example, a calibration process, etc., on the projection opticalsystem PL, and reflects the measurement results in the actual exposureprocess to be executed on the substrate P subsequently.

After the loading of the substrate P onto the substrate stage ST1 iscompleted and the measurement operation using the measurement stage ST2is ended, the exposure process on the substrate P is started. With theimmersion region LR being formed on the measurement stage ST2, thecontrol apparatus CONT performs an alignment process with respect to thesubstrate P that has been loaded onto the substrate stage ST1.Specifically, the control apparatus CONT detects an alignment mark onthe exchanged substrate P by means of the alignment system ALG anddetermines positional coordinates (alignment coordinates) of a pluralityof shot regions disposed on the substrate P.

When the alignment process is ended, the control apparatus CONT moves atleast one of either the substrate stage ST1 or the measurement stage ST2by using the stage drive apparatus SD1 or SD2 to bring the substratestage ST1 and the measurement stage ST2 in contact with (or close to)each other as shown in FIG. 5, and while maintaining the relativepositional relationship of the substrate stage ST1 and the measurementstage ST2 in the X-axis direction, uses the stage drive apparatuses SD1and SD2 to move the substrate stage ST1 and the measurement stage ST2together in the −X direction. By moving the substrate stage ST1 and themeasurement stage ST2 together, the control apparatus CONT moves theimmersion region LR from the upper surface F2 of the measurement stageST2 to the upper surface F1 of the substrate stage ST1. Although in themiddle of the movement of the immersion region LR of the liquid LQ,formed by the immersion mechanism 1, from the upper surface F2 of themeasurement stage ST2 to the upper surface F1 of the substrate stageST1, the immersion region LR is formed so as to span across the uppersurface F2 of the measurement stage ST2 and the upper surface F1 of thesubstrate stage ST1. Because the two stages are brought into contactwith (or close to) each other, the leakage of the liquid LQ from betweenthe stages can be prevented. When the substrate stage ST1 and themeasurement stage ST2 are further moved together further for apredetermined distance in the −X direction, a state, in which the liquidLQ is held between the final optical element LS1 of the projectionoptical system PL and the substrate stage ST1 (substrate P), is entered,and the immersion region LR of the liquid LQ, formed by the immersionmechanism 1, is thus formed on the upper surface F1 of the substratestage ST1 that includes the top surface of the substrate P. Thesubstrate stage ST1 and the measurement stage ST2 may be brought intocontact with (or close to) each other before the end of the alignmentprocess.

When the movement of the immersion region LR onto the substrate stageST1 is completed, the control apparatus CONT separates the measurementstage ST2 from the substrate stage ST1, moves the measurement stage ST2to a predetermined retreated position PJ, and starts exposure of thesubstrate P as shown in FIG. 6.

FIG. 7 is a schematic diagram of a positional relationship of theprojection optical system PL, the immersion region LR, and the substrateP when the substrate P is moved, with the immersion region LR beingformed on the top surface of the substrate P, to expose the substrate P.The plurality of shot regions S1 to S37 are set in a matrix form on thesubstrate P, and each of the plurality of shot regions S1 to S37 isexposed successively. The control apparatus CONT successively transfersthe device pattern of the mask M onto each of the plurality of shotregions S1 to S37 on the substrate P.

As mentioned above, the exposure apparatus EX according to the presentembodiment is a scan type exposure apparatus that exposes the substrateP while synchronously moving the mask M and the substrate P in the scandirection. The control apparatus CONT uses the substrate stage driveapparatus SD1 to move the substrate stage ST1 within the X-Y plane whilemeasuring (monitoring) the position of the substrate stage ST1 by meansof the laser interferometer 54, where the respective shot regions areexposed while moving the substrate P with respect to the exposure lightEL. The control apparatus CONT exposes the plurality of shot regions S1to S37 while moving the exposure light EL (optical axis AX of theprojection optical system PL) and the substrate P in a relative manner,for example, as indicated by arrows y1 in FIG. 7. The immersion regionLR is formed on the optical path of the exposure light EL and during theexposure of the shot regions S1 to S37 on the substrate P, the substrateP and the immersion region LR move in a relative manner. That is, theimmersion region LR that is formed locally on a partial region of thesubstrate P moves across the substrate P in accompaniment with themovement of the substrate stage ST1 (substrate P).

After ending the immersion exposure on the substrate P held by thesubstrate stage ST1, the control apparatus CONT may move at least one ofeither the substrate stage ST1 or the measurement stage ST2 by using thestage drive apparatus SD1 or SD2 to bring the substrate stage ST1 andthe measurement stage ST2 in contact with (or close to) each other. Thenin a manner opposite of the process performed before, the controlapparatus CONT moves the stages ST1 and ST2 together in the +X directionwhile maintaining the relative positional relationship of the substratestage ST1 and the measurement stage ST2 in the X-axis direction andthereby moves the measurement stage ST2 to a position below theprojection optical system PL. The immersion region LR formed by theimmersion mechanism 1 is thereby moved onto the upper surface F2 of themeasurement stage ST2. The control apparatus CONT moves the substratestage ST1 to a predetermined position, such as the substrate exchangeposition RP, and uses the conveying device H to perform the substrateexchange work of unloading the exposed substrate P from the substratestage ST1 that has been moved to the substrate exchange position RP andloading the substrate P to be subject to the exposure process onto thesubstrate stage ST1. The measurement stage ST2 and the substrate stageST1 may be brought into contact with (or close to) each other in themiddle of the exposure process.

Then after the alignment process is performed in the same manner asdescribed above on the substrate P that has been loaded onto thesubstrate stage ST1, the immersion region LR is moved onto the substratestage ST1. The control apparatus CONT repeats the operation of exposingthe substrate P on the substrate stage ST1, the operation of moving theimmersion region LR onto the measurement stage ST2, the operation ofexchanging the substrate P, the operation of moving the immersion regionLR onto the substrate stage ST1, onto which the substrate P has beenloaded, etc., as described above to successively expose a plurality ofsubstrates P.

FIG. 8 is a diagram of a state of performing immersion exposure of thesubstrate P held by the substrate holder PH of the substrate stage ST1.In FIG. 8, the substrate stage ST1 has the recess portion 58, and thesubstrate holder PH for holding the substrate P is disposed at an innerside of the recess portion 58. The substrate holder PH includes a basemember 80, supporting portions (pin portions) 81 formed on the basemember 80 and that support a rear surface of the substrate P, and aperipheral wall portion (rim portion) 82 formed on the base member 80,having an upper surface that opposes the rear surface of the substrate Pand being disposed so as to surround the supporting portions 81. Theplurality of the supporting portions 81 of the substrate holder PH aredisposed uniformly at the inner side of the peripheral wall portion 82.The supporting portions 81 include a plurality of supporting pins, andthe substrate holder PH is arranged as a so-called pin chuck mechanism.The pin chuck mechanism of the substrate holder PH has a suctionmechanism that includes a suction inlet 84, through which a gas in aspace 83, surrounded by the base member 80 of the substrate holder PH,the peripheral wall portion 82, and the substrate P, is suctioned to putthe space 83 in a negative pressure state, and holds the substrate P bysuction by means of the supporting portions 81 by putting the space 83in the negative pressure state.

The substrate P includes a base material W and a photosensitive materialRg, which is coated onto a portion of an upper surface of the basematerial W. Examples of the base material W include a silicon wafer. Asthe photosensitive material Rg, for example, a chemical amplificationresist is used. Either or both of a protective coat and anantireflection coat that is referred to as a topcoat film may beprovided so as to cover the photosensitive material Rg as necessary.

As shown in FIG. 8, when the substrate P is immersion exposed, theliquid LQ and the substrate P contact each other, and the liquid LQ mayapply an influence on the substrate P. When the liquid LQ contacts thephotosensitive material Rg, the state (physical properties, etc.) of thephotosensitive material Rg may change due to the liquid LQ. For example,if the state in which the liquid LQ and the photosensitive material Rgare in contact is sustained over a long time, the liquid LQ may permeateinto the photosensitive material Rg and the state of the photosensitivematerial Rg may thereby be changed. On the other hand, in a case wherethe photosensitive material Rg is a chemical amplification resist, ifthe state in which the liquid LQ and the photosensitive material Rg arein contact is sustained over a long time, a portion of the substances(for example, a PAG (Photo Acid Generator), etc.) contained in thechemical amplification resist may elute into the liquid LQ and the stateof the photosensitive material Rg may thereby be changed. Also, even ina case where the abovementioned topcoat film is provided, if the statein which liquid LQ and the topcoat film are in contact is sustained overa long time, the state of the topcoat film may change or the liquid LQmay permeate into the topcoat film and change the state of thephotosensitive material Rg below. There is also, the possibility of thestate of the base material W below changing via the photosensitivematerial Rg (or the topcoat film).

When the state in which the liquid LQ and the substrate P are in contactis thus sustained over a long time, the state of the substrate P maychange due to the liquid LQ. If the substrate P, with which the state ofthe photosensitive material, etc., has been changed, is exposed, thedesired pattern may not be formed on the substrate P. For example, in acase where the substrate P that has been in contact with the liquid LQfor no less than a predetermined time is exposed and a developmentprocess or other predetermined process is applied to the substrate P, adefect, such as the pattern formed on the substrate P not being of thedesired shape (desired size), may occur in the pattern.

The control apparatus CONT thus controls operations related to theexposure process in a manner such that integration values of contacttimes, during which the liquid LQ of the immersion region LR contactsthe respective shot regions S1 to S37 of the substrate P onto which thepattern of the mask M is transferred, do not exceed a predeterminedfirst tolerance value.

Here, the first tolerance value is an allowed time of contact with theliquid LQ by which the state of the substrate P can be maintained at adesired state. If an integration value of a contact time during whichthe liquid LQ and a shot region on the substrate P are in contact, is nomore than the first tolerance value, the desired pattern can be formedon the shot region. On the other hand, if an integration value of acontact time during which the liquid LQ and a shot region on thesubstrate P are in contact, exceeds the first tolerance value, it maynot be possible to form the desired pattern on the shot region. Thefirst tolerance value is a value that is in accordance with conditionsof the substrate P, can be determined in advance by an experiment orsimulation, and is stored in the storage apparatus MRY. Here, theconditions of the substrate P include such conditions as whether or nota topcoat is formed, physical properties of the film of thephotosensitive material Rg or the topcoat film that contacts the liquidLQ, the film arrangement (layer arrangement), etc.

The integration value of the contact time during which the liquid LQ anda shot region on the substrate P are in contact, not only includes thetime of contact of the liquid LQ and the substrate P during illuminationof the exposure light EL onto the substrate P in the state in which theimmersion region LR is formed on the shot region of the substrate P butalso, includes the time of contact of the liquid LQ and the shot regionof the substrate P before illumination of the exposure light EL onto thesubstrate P and the time of contact of the liquid LQ and the shot regionof the substrate P after illumination of the exposure light EL onto thesubstrate P.

For example, during exposure of a certain shot region, among theplurality of shot regions set on the substrate P, via the immersionregion LR, the liquid LQ of the immersion region LR may be in contactwith a shot region that has been immersion exposed already or a shotregion to be exposed afterward in addition to the shot region beingexposed.

For example, in FIG. 7, when the exposure light EL is being illuminatedvia the immersion region LR onto the seventh shot region S7 of thesubstrate P, the liquid LQ of the immersion region LR contacts the sixthshot region S6, which has been immersion exposed before the seventh shotregion S7, and the eighth shot region S8, which is to be exposed afterthe seventh shot region S7.

Also, when the exposure light EL is being illuminated via the immersionregion LR onto the seventh shot region S7 of the substrate P, not onlythe sixth shot region S6 and the eighth shot region S8 but either orboth of the already immersion exposed shot regions S1 and S2 and theshot regions S10, S11, and S12 to be immersion exposed subsequently mayalso, be in contact with the liquid LQ of the liquid immersion regionLR. The seventh shot region S7 may be in contact with the liquid LQ ofthe liquid immersion region LR not just during exposure but also, beforeand after exposure, such as during exposure of the shot regions S1, S2,and S6 and during exposure of the shot regions S8, S10, S11, and S12,etc.

Thus between the loading onto and the unloading from the substrate stageST1, the respective shot regions S1 to S37 on the substrate P may be incontact with the liquid LQ not just during illumination of the exposurelight EL but also, for example, during movement of the substrate P forscan-exposure before and after the illumination (including theacceleration and deceleration periods, etc.), during stepping of thesubstrate P, during the alignment process, etc. The integration value ofthe contact time during which the liquid LQ of the immersion region LRand a shot region on the substrate P are in contact, includes the sum ofthese respective contact times.

In the present embodiment, the control apparatus CONT adjusts therelative positional relationship of the substrate P and the immersionregion LR so that the integration values of the contact times, duringwhich the liquid LQ of the immersion region LR and the respective shotregions S1 to S37 on the substrate P are in contact, do not exceed thepredetermined first tolerance value between the loading of the substrateP onto the substrate stage ST1 and the unloading of the substrate P.

Specifically, the control apparatus CONT adjusts movement conditions ofthe substrate P so that the integration values of the contact times,during which the liquid LQ of the immersion region LR and the respectiveshot regions S1 to S37 on the substrate P are in contact, do not exceedthe predetermined first tolerance value. Here, the movement conditionsof the substrate P include at least one condition among: a movementspeed; a movement acceleration/deceleration rate; and a movementdirection (movement locus) of the substrate P with respect to theexposure light EL (optical path space K1).

As described above, each of the plurality of shot regions set on thesubstrate P may contact the liquid LQ for just a predetermined time anda predetermined number of times, including during illumination of theexposure light EL, before illumination of the exposure light EL, andafter illumination of the exposure light EL. The number of times and thetime during which a single shot region contacts the liquid LQ of theimmersion region LR, vary according to the arrangement (positions andsizes) of the shot regions on the substrate P, movement conditions ofthe substrate P with respect to the immersion region LR, and the stateof the immersion region LR. Here, the state of the immersion region LRincludes the size and shape of the immersion region LR. The size andshape of the immersion region LR varies according to immersionconditions during the forming of the immersion region LR by theimmersion mechanism 1, the movement conditions of the substrate P, etc.The immersion conditions include such conditions as the structure of thenozzle member 70 (for example, the positions and shapes of the supplyports 12, the positions and shapes of the collection ports 22, the sizeand shape of the bottom surface of the nozzle member 70, etc.), theamount of liquid supplied per unit time from the supply ports 12, theamount of liquid recovered per unit time via the collection ports 22,etc.

For example, either or both of the size and shape of the immersionregion LR may change according to the structure of the nozzle member 70.Either or both of the size and shape of the immersion region LR mayalso, change according to the amount of liquid supplied per unit timefrom the supply ports 12, the amount of liquid recovered per unit timevia the collection ports 22, etc. Also, for example, when the movementdirection of the substrate P with respect to optical path space K1 isthe +Y direction, the immersion region LR may, depending on theviscosity of the liquid LQ, etc., enlarge toward the +Y side, or whenthe movement direction of the substrate P with respect to optical pathspace K1 is the −Y direction, the immersion region LR may enlarge towardthe −Y side. The direction of enlargement of the immersion region LR andconsequently either or both of the size and shape of the immersionregion LR may thus change according to the movement direction of thesubstrate P. The degree of enlargement of the immersion region LR mayalso, vary according to either or both of the movement speed and themovement acceleration/deceleration rate of the substrate P, and eitheror both of the size and shape of the immersion region LR may changeaccordingly.

Thus with the present embodiment, before actual exposure (main exposure)of the substrate P for manufacture of a device, a test exposure isperformed to determine exposure conditions (including movementconditions of the substrate P, immersion conditions, etc.) such that theintegration value of the contact time during which the liquid LQ of theimmersion region LR and a shot region on the substrate P are in contact,will be no more than the first tolerance value, and actual exposure ofthe substrate P for manufacture of the device is carried out based onthe exposure conditions thus determined.

Specifically, as shown in the flowchart of FIG. 9, first, the controlapparatus CONT loads the substrate P onto the substrate stage ST1 andperforms test exposure of the substrate P with the optical path space K1being filled with the liquid LQ and under predetermined movementconditions and immersion conditions of the substrate P (step SA1). Thetest exposure of the substrate P is performed for the actual arrangement(positions, sizes, and number of shot regions) of the plurality of shotregions of the substrate P. The movement conditions and immersionconditions of the substrate P during the test exposure are set toconditions, with which the integration values of the contact times ofthe respective shot regions with the liquid LQ are predicted not toexceed the first tolerance value, by performing simulation, etc., inadvance in consideration of throughput, etc. The position information ofthe substrate stage ST1 (substrate P) with respect to the exposure lightEL (immersion region LR) while the test exposure is being performed ismeasured by the laser interferometer 54, and the control apparatus CONTtest-exposes the substrate P while measuring the position information ofthe substrate P (substrate stage ST1) by means of the laserinterferometer 54.

Although during the test exposure, the remaining exposure conditions forthe substrate P (for example, the exposure dose, type of the mask M(pattern), illumination conditions, etc.) besides the abovementionedmovement conditions and immersion conditions do not all have to be madethe same as those during the main exposure, the conditions may bematched substantially or arranged so as not to differ greatly betweenthe test exposure and the main exposure.

Also, the state (size and shape) of the immersion region LR during thetest exposure is measured by a detection apparatus 90, such as shown inFIG. 10. In FIG. 10, the detection apparatus 90 has an emitting unit 91that emits a detection light La and a light receiving unit 92, disposedin a predetermined positional relationship with respect to the detectionlight La. The detection apparatus 90 can determine the size of theimmersion region LR based on results of light received by the lightreceiving unit 62 when the detection light La is illuminated onto eachof a plurality of positions from the emitting unit 91. The emitting unit91 illuminates the detection light La on each of the plurality ofpositions that include edges LG of the immersion region LR. In theexample shown in FIG. 10, the emitting unit 91 illuminates a pluralityof detection light components La, aligned in the Y-axis direction, alongthe X-axis direction.

The light receiving unit 92 has a plurality of light receiving elementscorresponding to the plurality of detection light components La. Theposition information of these light receiving elements is known inadvance from design values, etc. When detection light components La1,which are a portion of the plurality of detection light components Laemitted from the emitting unit 91, are illuminated onto the liquid LQ ofthe immersion region LR, the detection light components La1 do not reachthe light receiving elements of the light receiving unit 92corresponding to the detection light components La1 or become decreasedin the light amounts received by the light receiving elements.Meanwhile, the remaining portion La2 of the detection light componentsarrive at the light receiving unit 92 without passing through the liquidLQ of the immersion region LR. The detection apparatus 90 can thusdetermine the size of the immersion region LR based on the lightreceiving results of the light receiving elements of the light receivingunit 92 that received the detection light components La1 and theposition information of these light receiving elements.

Also, although in the example shown in FIG. 10, the size in the Y-axisdirection of the immersion region LR can be determined because thedetection apparatus 90 illuminates the detection light components Laonto the immersion region LR from the X-axis direction, the size in theX-axis direction of the immersion region LR can be determined byilluminating the detection light components La onto the immersion regionLR from the Y-axis direction. Obviously, the detection light componentsLa may also, be illuminated from a direction within the X-Y plane thatis inclined with respect to the X-axis (Y-axis) direction. By thenperforming a computation process on the respective light receivingresults for illumination of the detection light components La onto theimmersion region LR from a plurality of directions, the detectionapparatus 90 (or the control apparatus CONT) can determine the shape ofthe immersion region LR. The detection light components La may beilluminated parallel to the X-Y plane or in an inclined manner withrespect to the X-Y plane.

As long as the state (size and shape) of the immersion region LR can bedetected, the present invention is not restricted to the detectionapparatus of FIG. 10, and the state of the immersion region LR may also,be detected, for example, using a detection apparatus with an imagepickup element. Also, although the detection apparatus for detecting thestate of the immersion region LR is of an arrangement, in which theemitting unit and the light receiving unit are disposed so as tosandwich the immersion region LR, the present invention is not limitedthereto and, for example, a detection apparatus, with which a pluralityof detection units are disposed on the nozzle member 70 so as tosurround the immersion region LR, may be used instead.

The substrate P used in this process may be the substrate P that is usedin the actual exposure or may be a test exposure substrate having asurface state (substrate conditions) equivalent to that of the substrateP used in the actual exposure.

Based on the position information on the substrate P (substrate stageST1), which is the measurement result of the laser interferometer 54,the control apparatus CONT can determine the relative positionalrelationship between the liquid LQ of the immersion region LR, formed onthe optical path of the exposure light EL, and the respective shotregions on the substrate P. Also, based on the position information onthe substrate P (substrate stage ST1), which is the measurement resultof the laser interferometer 54 and the state (size and shape) of theimmersion region LR, which is the detection result of the detectionapparatus 90, the control apparatus CONT can determine the number oftimes the respective shot regions on the substrate P contact the liquidLQ of the immersion region LR and the contact times of the respectivecontacts. Because the arrangement of the shot regions (shot map) set onthe substrate P is known and the size and shape of the immersion regionLR is detected by the detection apparatus 90, the control apparatus CONTcan determine the number of times the respective shot regions contactthe liquid LQ of the immersion region LR and the contact times of therespective contacts based on the measurement result of the laserinterferometer 54. The control apparatus CONT can thus determine theintegration values of the contact times, during which the liquid LQ ofthe immersion region LR and the respective shot regions on the substrateP are in contact (step SA2).

The control apparatus CONT then determines the exposure conditions(including the movement conditions and immersion conditions of thesubstrate P) so that the integration values of the contact times, duringwhich the liquid LQ of the immersion region LR and the respective shotregions on the substrate P are in contact, are no more than the firsttolerance value (step A3). That is, the control apparatus CONT judgeswhether or not any of the integration values of the contact times of therespective shot regions computed in step SA2 exceeds the first tolerancevalue, and if none of the integration values of the contact times of theshot regions exceeds the first tolerance value, sets the conditionsduring the test exposure as the actual exposure conditions forsubsequent substrates P. If there is a shot region for which theintegration value of the time of contact with the liquid LQ exceeds thefirst tolerance value, the conditions during the test exposure arecorrected (adjusted) to determine actual exposure conditions such thatall of the integration values of the contact times of the shot regionsare no more than the first tolerance value. The control apparatus CONTstores the information related to the exposure conditions (including themovement conditions and immersion conditions of the substrate P),determined based on the test exposure, in the memory apparatus MRY (stepSA4).

The control apparatus CONT then performs exposure (actual exposure) ofthe substrate P for manufacturing a device based on the determinedexposure conditions (step SA5). Based on the exposure conditions(movement conditions), stored in the storage apparatus MRY in step SA4,the control apparatus CONT drives the substrate stage ST1 that holds thesubstrate P while monitoring the position information of the substratestage ST1 by means of the laser interferometer 54 and performs immersionexposure of the substrate P while adjusting the relative positionalrelationship between the substrate P and the immersion region LR. Theshot regions S1 to S37 can thereby be exposed without the integrationvalue of the contact time during which the liquid LQ of the immersionregion LR and a shot region on the substrate P are in contact, exceedingthe first tolerance value.

Although here, the state of the immersion region LR is detected usingthe detection apparatus 90 and the integration values of the contacttimes, during which the liquid LQ of the immersion region LR and therespective shot regions on the substrate P are in contact, aredetermined based on the detection results and the measurement results ofthe laser interferometer 54, for example, a predetermined pattern mayactually be exposed on the substrate P during the test exposure in stepSA1 and the actual exposure conditions (including the movementconditions and immersion conditions of the substrate P), with which thepattern shape will be in the desired state, may be determined bymeasuring the pattern shape formed on the substrate P using apredetermined shape measurement apparatus. In this case, because it canbe predicted from the test exposure that with a shot region, for which apattern defect (including a ling width anomaly, etc.) is present on thesubstrate, the time of contact with the liquid LQ is longer than thefirst tolerance value, the actual exposure conditions are determined sothat the time of contact of the liquid LQ with the shot region, withwhich the pattern defect is present, will be shorter than that of theexposure conditions during the test exposure. On the other hand, forexample, a liquid sensor, having an outer shape substantially equivalentto the substrate P, capable of being held by the substrate stage ST1(substrate holder PH), and capable of detecting the liquid LQ, may bemade to be held by the substrate stage ST1, and the integration value ofthe contact time during which the liquid LQ of the immersion regions LRand a shot region on the substrate P are in contact, may be determinedby forming the immersion region LR on the liquid sensor and measuringthe contact time during which the liquid LQ of the immersion region LRand the liquid sensor are in contact, under the same movement conditionsand immersion conditions as the test exposure. The actual exposureconditions of the substrate P may be determined, based on justexperiment or simulation results, so that the time of contact of therespective shot regions on the substrate P and the liquid LQ do notexceed the first tolerance value.

An example of the movement conditions of the substrate P is shown inFIG. 11. FIG. 11 is a diagram of a relationship of the movement speed ofthe substrate P in regard to the Y-axis direction and time in a casewhere two shot regions, aligned in the X-axis direction on the substrateP, are exposed successively. As shown in FIG. 11, when a first shotregion, among the two shot regions set on the substrate P, is to beexposed, the control apparatus CONT moves the substrate stage ST1 in amanner such that, after the first shot region is moved to a scanstarting position, a transition of states occurs in the order of: anaccelerating state, in which the first shot region accelerates, forexample, in the +Y direction with respect to the exposure light EL(projection region AR), a constant speed state, in which the first shotregion moves at a constant speed, and a decelerating state, in which thefirst shot region decelerates. Here, for example, in the constant speedstate, a pattern image of a portion of the mask M that corresponds to anillumination region of the exposure light EL on the mask M is projectedonto the projection region AR of slit-like (rectangular) form of theprojection optical system PL. Then for the scan-exposure of a secondshot region, the control apparatus CONT, after completion of thescan-exposure of the first shot region, performs stepping operation ofthe substrate stage ST1 in the X-axis direction while decelerating it inregard to the Y-axis direction to move the second shot region to thescan starting position and thereafter stops the movement of thesubstrate P once to enter a stopped state. To expose the second shotregion, the control apparatus CONT moves the substrate P in a mannersuch that the second shot region undergoes a transition of states in theorder of: an accelerating state, a constant speed state, and adecelerating state with respect to the exposure light EL, for example,in the −Y direction.

The control apparatus CONT can adjust the movement speed of thesubstrate P as a movement condition of the substrate P. For example, themovement speed of the substrate P is increased so that the integrationvalue of the contact time during which the liquid LQ of the immersionregion LR and a shot region on the substrate P are in contact, does notexceed the first tolerance value. By increasing the movement speed (scanspeed) during exposure while moving the shot region on the substrate Pin the Y-axis direction with respect to the exposure light EL, thecontact time during which the liquid LQ of the immersion region LR andthe shot region on the substrate P are in contact, can be shortened andthe integration value of the contact time can be decreased. Tocompensate for the variation of the exposure dose of the shot regionthat accompanies a change of the scan speed, at least one among: theintensity of the exposure light EL; the oscillation frequency; and thewidth of the projection region AR in the Y-axis direction; is adjusted.In illuminating the exposure light EL onto a shot region on thesubstrate P, the control apparatus CONT can also, adjust the integrationvalue of the contact time during which the liquid LQ of the immersionregion LR and a shot region on the substrate P are in contact, byadjusting the movement acceleration/deceleration rate of the substrate Pin the Y-axis direction during the illumination of the exposure lightEL.

Also, besides the movement speed and the movementacceleration/deceleration rate of the substrate P in the Y-axisdirection (scan direction), the control apparatus CONT can adjust theintegration value of the contact time during which the liquid LQ of theimmersion region LR and a shot region on the substrate P are in contact,by adjusting either or both of the movement speed (stepping speed) andthe movement acceleration/deceleration rate in the stepping operation,by which, after exposure of the first shot region among the two shotregions in FIG. 11, the next, second shot region is moved to the scanstarting position for exposure of the second shot region.

The control apparatus CONT can also, adjust the integration value of thecontact time during which the liquid LQ of the immersion region LR atthe optical path of the exposure light EL and a shot region on thesubstrate P are in contact, by adjusting the movement direction(movement locus) of the substrate P with respect to the exposure lightEL. The integration value of the contact time during which the liquid LQof the immersion region LR and a shot region on the substrate P are incontact, can be adjusted, for example, by adjusting the order ofexposure in successively exposing the plurality of shot regions S1 toS37 set on the substrate P or by adjusting the stepping direction,movement speed (stepping speed), or movement acceleration/decelerationrate in the stepping operation, by which, after exposure of a first shotregion, a next, second shot region is moved to the scan startingposition for exposure of the second shot region.

A stationary time during which the substrate P is substantiallystationary with respect to the immersion region LR, is also, includedamong the movement conditions of the substrate P. Thus as shown in FIG.12, the control apparatus CONT changes the stationary time during whichthe substrate P is substantially stationary with respect to theimmersion region LR, to adjust the movement conditions of the substrateP (substrate stage ST1). The integration value of the contact timeduring which the liquid LQ of the immersion region LR and a shot regionon the substrate P are in contact, can thereby be adjusted. With theexample shown in FIG. 12, the control apparatus CONT adjusts themovement conditions of the substrate P (substrate stage ST1) so that thestationary time during which the substrate P is stationary with respectto the immersion region LR, is substantially zero.

Regardless of the adjustment of the integration values of the times ofcontact of the substrate P and the liquid LQ, the stationary time duringwhich at least a portion of the immersion region LR (an edge LG of theimmersion region LR) is substantially stationary on the substrate P(that is, during which the position of the edge LG of the immersionregion LR on the substrate P practically does not change), is preferablyas short as possible. When a state in which an edge LG of the immersionregion LR is substantially stationary on the substrate P is sustainedfor a long time, foreign matter (particles) may become attached to aportion of the top surface of the substrate P near the edge LG of theimmersion region LR as shown in the schematic view of FIG. 13 and giverise to a defect in the pattern at the edge LG portion. In the presentembodiment, a second tolerance value is set with respect to thestationary time during which an edge LG of the immersion region LR issubstantially stationary on the substrate P, to suppress the influenceof the liquid LQ on the substrate P. That is, the control apparatus CONTcontrols the operations related to the exposure process so that thestationary time during which an edge LG of the immersion region LR issubstantially stationary on the substrate P, does not exceed the secondtolerance value.

Here, the second tolerance value is the tolerance value of the time inwhich foreign matter does not become attached to a portion of thesubstrate P near an edge LG. If the stationary time during which an edgeLG of the immersion region LR is substantially stationary on thesubstrate P, is no more than the second tolerance value, the state ofthe substrate P is maintained at a desired state and a pattern of adesired shape can be formed on the substrate P. This second tolerancevalue can be determined in advance by an experiment or simulation and isstored in the storage apparatus MRY.

The control apparatus CONT adjusts the relative positional relationshipof the substrate P and the immersion region LR so that the stationarytime during which an edge LG of the immersion region LR is substantiallystationary on the substrate P, does not exceed the second tolerancevalue. For example, the control apparatus CONT controls the operation ofthe substrate stage ST1 and adjusts the movement conditions of thesubstrate P so that the substrate P continues to move constantly withrespect to the immersion region LR.

Although the first tolerance value, concerning the integration value ofthe contact time during which the liquid LQ of the immersion region LRand a shot region on the substrate P are in contact, and the secondtolerance value, concerning the stationary time during which an edge LGof the immersion region LR is substantially stationary on the substrateP, may be the same, these can be set to different values. For example,if the second tolerance value is smaller (more stringent) than the firsttolerance value, the control apparatus CONT, for example, makes thesubstrate P undergo inching movement with respect to the immersionregion LR, even if the time elapsed from the point at which the liquidLQ of the immersion region LR contacts the substrate P is no more thanthe first tolerance value, so that the stationary time during which anedge LG of the immersion region LR is substantially stationary on thesubstrate P, does not reach the second tolerance value. Occurrence ofproblems (attachment of foreign matter, etc.) due to the stationary timeduring which an edge LG of the immersion region LR is substantiallystationary on the substrate P, exceeding the second tolerance value canthereby be prevented.

As described above, by preventing the integration value of the contacttime during which the liquid LQ of the immersion region LR and a shotregion on the substrate P are in contact, from exceeding the firsttolerance value, the influences that the liquid LQ applies on thesubstrate P can be suppressed to enable a desired pattern to be formedon the substrate P.

Also, by adjusting the relative positional relationship of the substrateP and the immersion region LR so that the stationary time during whichan edge LG of the immersion region LR is substantially stationary on thesubstrate P, does not exceed the second tolerance value, the attachmentof foreign matter (particles) on the substrate P and other influencesthat the liquid LQ applies on the substrate P can be suppressed toenable a desired pattern to be formed on the substrate P.

In the present embodiment, the actual exposure conditions of thesubstrate P are determined so that the integration values of the contacttimes, during which the liquid LQ of the immersion region LR and therespective shot regions on the substrate P are in contact, do not exceedthe first tolerance value and so that the stationary time of theimmersion region LR on the substrate P does not exceed the secondtolerance value, if the integration values of the times of contact ofthe liquid LQ of the immersion region LR with the respective shotregions on the substrate P or the stationary time of the immersionregion LR on the substrate P do or do not present a problem, the actualexposure conditions may be set without considering the correspondingtolerance value.

Also, preferably in forming the immersion region LR by supplying theliquid LQ to the optical path space K1, in which the liquid LQ is notyet present, the supplying of the liquid LQ is started at a region thatdiffers from the top surface (shot region) of the substrate P held bythe substrate stage ST1, that is for example, a portion of the uppersurface F1 of the substrate stage ST1 other than the top surface of thesubstrate P or the upper surface F2 of the measurement stage ST2. Bydoing so, the integration value of the contact time during which theliquid LQ of the immersion region LR and a shot region on the substrateP held by the substrate stage ST1 are in contact in the interval fromthe loading of the substrate P onto the substrate stage ST1 to theunloading of the substrate P, can be reduced.

Also, by starting the supplying of the liquid LQ at a region thatdiffers from the top surface of the substrate P, even if there isforeign matter in the supply passage (internal passage) of the nozzlemember 70 or the interior of the supply pipe 13, etc., the foreignmatter will be supplied to the region that differs from the top surfaceof the substrate P. Because an immersion region LR, constituted of aclean liquid LQ, is formed on the substrate P by starting the supply ofthe liquid LQ at a region that differs from the top surface of thesubstrate P, forming the immersion region LR by performing the operationof supplying the liquid LQ to the region that differs from the topsurface of the substrate P for a predetermined time, and thereaftermoving the formed immersion region LR onto the substrate P, theattachment of foreign matter onto the substrate P can be prevented.

Also, in a case where the waiting time for waiting for the temperatureof the nozzle member 70, etc., to stabilize is set after the start ofsupply of the liquid LQ to the optical path space K1, the stabilizationof the temperature of the nozzle member 70, etc., is preferably notawaited with the immersion region LR being formed on the substrate P butthe stabilization of the temperature of the nozzle member 70, etc., ispreferably awaited, for example, with the immersion region LR beingformed on the upper surface F1 of the substrate stage ST1 or the uppersurface F2 of the measurement stage ST2.

If the stabilization of the temperature of the nozzle member 70, etc.,is to be awaited with the immersion region LR being formed on thesubstrate P, the relative positional relationship of the substrate P andthe immersion region LR is adjusted so that the integration value of thecontact time during which the liquid LQ of the immersion region LR and ashot region on the substrate P are in contact, does not exceed the firsttolerance value. In the same manner, if the stabilization of thetemperature of the nozzle member 70, etc., is to be awaited with theimmersion region LR being formed on the substrate P, the relativepositional relationship of the substrate P and the immersion region LRis adjusted so that the stationary time during which an edge LG of theimmersion region LR is substantially stationary on the substrate P, doesnot exceed the second tolerance value.

Although as described above, the integration value of the contact timeduring which the liquid LQ of the immersion region LR and a shot regionon the substrate P are in contact, includes the contact time beforeillumination of the exposure light EL onto the substrate P and thecontact time after illumination of the exposure light EL onto thesubstrate P, separate tolerance values (first tolerance values) may beset respectively for the integration value of the contact time beforeillumination of the exposure light EL onto the substrate P and theintegration value of the contact time after illumination of the exposurelight EL onto the substrate P. As described above, because in the casewhere the photosensitive material Rg is a chemical amplification resist,an acid is generated by a photo acid generator (PAG) after illuminationof the exposure light EL, the state of the substrate P beforeillumination of the exposure light EL and the state of the substrate Pafter illumination of the exposure light EL may differ from each other.That is, among cases where a pattern is to be formed to a desired shapeon the substrate P, there are cases where although a comparatively largeintegration value of the contact time is tolerated before illumination(or after illumination) of the exposure light EL onto the substrate P,the integration value of the contact time after illumination (or beforeillumination) of the exposure light EL onto the substrate P needs to beshortened. The first tolerance values may thus be set in considerationrespectively of the integration value of the contact time beforeillumination of the exposure light EL onto the substrate P and theintegration value of the contact time after illumination of the exposurelight EL onto the substrate P. In the same manner, in regard to thestationary time during which the immersion region LR is stationary onthe substrate P, a second tolerance value for a shot region beforeexposure and a second tolerance value for a shot region after exposuremay be set separately.

Although in the above-described embodiment, the integration values ofthe contact times, during which the liquid LQ of the immersion region LRand the respective shot regions on the substrate P are in contact, areprevented from exceeding the predetermined first tolerance value, theobject of the integration value computation is not limited thereto and,for example, an integration value of a contact time during which theliquid LQ of the immersion region LR and the substrate P as a whole arein contact may be prevented from exceeding a predetermined tolerancevalue.

Second Embodiment

A second embodiment shall now be described. In the followingdescription, components that are the same as or equivalent to those ofthe above-described embodiment shall be provided with the same symbolsand description thereof shall be simplified or omitted.

Although operations during exposure of the substrate P were describedabove with the first embodiment, the relative positional relationship ofthe substrate P and the immersion region LR can, in the same manner, beadjusted in regard to operations in performing predetermined processesrelated to exposure.

For example, before exposing the substrate P, an alignment process,which includes an operation of detecting an alignment mark on thesubstrate P using the alignment system ALG, is performed. Although inthe present embodiment, the detection of the alignment mark by thealignment system ALG is performed with the immersion region LR beingformed on the measurement stage ST2, depending on the positionalrelationship (distance) of the projection optical system PL and thealignment system ALG, the measurement stage ST2 and the substrate stageST1 may have to be brought into contact with (or close to) each otherand moved together and at least a portion of the immersion region LR mayhave to be formed on the substrate stage ST1 during the alignmentprocess. In this case, the liquid LQ of the immersion region LR that isformed at the image plane side of the projection optical system PL andthe substrate P may be brought into contact. The control apparatus CONTthus controls the operations of the substrate stage ST1, etc., so thatthe integration value of the contact time during which the liquid LQ ofthe immersion region LR and a shot region on the substrate P are incontact, does not exceed the first tolerance value with the inclusion ofthe alignment process. Specifically, the time for processing by thealignment system ALG and the movement conditions of the substrate Pduring the alignment process using the alignment system ALG arecontrolled to adjust the times of contact of the liquid LQ of theimmersion region LR and the shot regions on the substrate P. Theinfluences that the liquid LQ applies on the substrate P can thereby besuppressed.

In order to secure a degree of freedom in the actual exposure conditionsof the substrate P, the time of contact of the liquid LQ of theimmersion region LR and the substrate P during the alignment process ispreferably set to zero as in the first embodiment or made as short aspossible.

Also, because the above-described alignment process is performed in astate in which the alignment system ALG and the alignment mark on thesubstrate P are substantially stationary, in a case where the immersionregion LR is formed on the substrate P, either or both of the time forprocessing by the alignment system ALG and the movement conditions ofthe substrate P are adjusted so that the stationary time during which anedge LG of the immersion region LR is substantially stationary on thesubstrate P does not exceed the second tolerance value. The influencesthat the liquid LQ applies on the substrate P can thereby be suppressed.

As described above, by adjusting the predetermined processing times inthe series of sequences, the influences that the liquid LQ applies onthe substrate P can be suppressed.

Although a description was provided here using the alignment system ALGas an example of a processing device that performs a predeterminedprocess, the same applies not just to the alignment system ALG but also,to other processing devices that perform predetermined processes relatedto exposure (for example, the focus leveling detection system that canbe used to measure step information of the substrate P, etc.).

Third Embodiment

A third embodiment shall now be described with reference to FIG. 14. Inthe following description, components that are the same as or equivalentto those of the above-described embodiments shall be provided with thesame symbols and description thereof shall be simplified or omitted.Although with the above-described embodiments, the control apparatusCONT adjusts the movement speed, movement acceleration/decelerationrate, movement direction (movement locus), etc., of the substrate P sothat the integration value of the contact time during which the liquidLQ of the immersion region LR and a shot region on the substrate P arein contact does not exceed the first tolerance value, in the presentembodiment, the control apparatus CONT moves the immersion region LR toa region that differs from a shot region (top surface) of the substrateP to prevent the integration value of the contact time during which theliquid LQ of the immersion region LR and a shot region on the substrateP are in contact from exceeding the first tolerance value. The controlapparatus CONT measures the relative positional relationship of thesubstrate P and the immersion region LR using the laser interferometer54 and, based on the measurement result of the laser interferometer 54,that is, the measurement result of the relative positional relationshipof the substrate P and the immersion region LR, adjusts the relativepositional relationship of the substrate P and the immersion region LRso that the integration value of the contact time, during which theliquid LQ of the immersion region LR and a shot region on the substrateP are in contact, does not exceed the first tolerance value.

Specifically, the control apparatus CONT controls the operation of thesubstrate stage ST1 while monitoring the position information of thesubstrate stage ST1 using the laser interferometer 54 so that theintegration value of the contact time during which the liquid LQ of theimmersion region LR and a shot region on the substrate P are in contactdoes not exceed the first tolerance value. When the integration value ofthe contact time during which the liquid LQ of the immersion region LRand a shot region on the substrate P are in contact is about to exceedthe first tolerance value, the control apparatus CONT drives thesubstrate stage ST1 while using the laser interferometer 54 to monitorthe position information of the substrate stage ST1 and thereby movesthe immersion region LR on the substrate P to an outer side of thesubstrate P, that is, onto the upper surface F1 of the substrate stageST1 as shown in FIG. 14. The integration value of the contact timeduring which the liquid LQ of the immersion region LR and a shot regionon the substrate P are in contact can thereby be prevented fromexceeding the predetermined first tolerance value.

On the other hand, the control apparatus CONT may move the immersionregion LR from the substrate P onto the measurement stage ST2 to preventthe integration value of the contact time during which the liquid LQ ofthe immersion region LR and a shot region on the substrate P are incontact, from exceeding the first tolerance value. In the case where theimmersion region LR is to be moved from above the substrate P, held bythe substrate stage ST1 onto the measurement stage ST2, the substratestage ST1 and the measurement stage ST2 can be brought into contact with(or close to) each other and the substrate stage ST1 and the measurementstage ST2 can be moved together within the X-Y plane in this state tomove the immersion region LR onto the measurement stage ST2 as wasdescribed with reference to FIG. 3, etc.

The control apparatus CONT may also move the immersion region LR fromthe substrate P onto a predetermined object other than the substratestage ST1 and the measurement stage ST2 so that the integration value ofthe contact time during which the liquid LQ of the immersion region LRand a shot region on the substrate P are in contact, does not exceed thefirst tolerance value.

In the same manner, the control apparatus CONT may control the operationof the substrate stage ST1 while using the laser interferometer 54 tomonitor the position information of the substrate stage ST1 so that thestationary time during which an edge LG of the immersion region LR issubstantially stationary on the substrate P, does not exceed the secondtolerance value. When the stationary time during which the edge LG ofthe immersion region LR is substantially stationary on the substrate P,is about to exceed the second tolerance value, the control apparatusCONT drives the substrate stage ST1 while using the laser interferometer54 to monitor the position information of the substrate stage ST1 tomove the immersion region LR on the substrate P onto the upper surfaceF1 of the substrate stage ST1. The control apparatus CONT may also movethe immersion region LR from the substrate P onto the measurement stageST2 so that the stationary time during which the edge LG of theimmersion region LR is substantially stationary on the substrate P, doesnot exceed the second tolerance value. The control apparatus CONT mayalso move the immersion region LR from the substrate P onto apredetermined object other than the substrate stage ST1 and themeasurement stage ST2 so that the stationary time during which an edgeLG of the immersion region LR is substantially stationary on thesubstrate P does not exceed the second tolerance value.

Fourth Embodiment

A fourth embodiment shall now be described with reference to FIG. 15. Inthe following description, components that are the same as or equivalentto those of the above-described embodiments shall be provided with thesame symbols and description thereof shall be simplified or omitted. Inorder to prevent the integration value of the contact time during whichthe liquid LQ of the immersion region LR and a shot region on thesubstrate P are in contact, from exceeding the first tolerance value,the control apparatus CONT may stop the supply of the liquid LQ forforming the immersion region LR and remove (recover all of) the liquidLQ of the immersion region LR. In removing the liquid LQ of theimmersion region LR, the control apparatus CONT controls the operationof the immersion mechanism 1. The control apparatus CONT controls theoperation of the liquid supply apparatus 11 to stop the supply of theliquid LQ from the supply ports 12 to the optical path space K1, andcontinues the liquid recovery operation by the liquid recovery apparatus21 via the collection ports 22 for a predetermined time after stoppingthe supply of the liquid LQ. The control apparatus CONT can therebyremove the liquid LQ of the immersion region LR (the liquid LQ of theoptical path space K1) using the immersion mechanism 1.

The control apparatus CONT may also, remove (recover all of) the liquidLQ of the immersion region LR to prevent the stationary time duringwhich the edge LG of the immersion region LR is substantially stationaryon the substrate P, from exceeding the second tolerance value.

Although in the present embodiment, the total recovery of the liquid LQof the immersion region LR is performed on the substrate P, the presentinvention is not limited thereto, and the total recovery of the liquidLQ may be performed after moving the immersion region LR onto the uppersurface F1 of the substrate stage ST1 or the upper surface F2 of themeasurement stage ST2, etc. Also, recovery of the liquid LQ by theliquid recovery apparatus 21 does not have to be performed necessarilyand, for example, if a groove for draining liquid is provided in thesubstrate stage ST1 (or the measurement stage ST2) the liquid LQ of theimmersion region LR may be recovered via this groove.

Fifth Embodiment

As was described with the second embodiment, there may be cases wherethe liquid LQ and the substrate P are brought into contact during thealignment process before exposure of the substrate P, or there may becases where a circumstance, in which the alignment process is disabled(the alignment mark cannot be detected), occurs during the alignmentprocess. Circumstances in which the alignment process is disabledinclude, for example, circumstances in which the control apparatus CONTcannot compute the position information of a shot region on thesubstrate P based on the output results of the alignment system ALG. Inthe description that follows, a state in which the alignment process isdisabled shall be referred to as an “alignment error.”

When an alignment error occurs, the exposure apparatus EX is operated bya manual process (assisting process) performed by an operator. Forexample, by an assisting process performed by the operator, a process ofmoving the substrate stage ST1 and thereby positioning the alignmentmark on the substrate P, held by the substrate stage ST1, inside themeasurement region of the alignment system ALG is performed.

Although during the assisting process by the operator, a circumstance,in which the liquid LQ of the immersion region LR, formed by theimmersion mechanism 1, and a shot region on the substrate P continue tobe in contact over a long time, may occur, the control apparatus CONTmonitors the position information of the substrate stage ST1 by means ofthe laser interferometer 54 even during the assisting process by theoperator. That is, the control apparatus CONT uses the laserinterferometer 54 to measure the relative positional relationship of thesubstrate P and the immersion region LR even during the assistingprocess by the operator.

During the assisting process by the operator, when the integration valueof the contact time during which the liquid LQ of the immersion regionLR and a shot region on the substrate P are in contact, reaches apredetermined value with respect to the first tolerance value (when theintegration value is about to exceed the first tolerance value), thecontrol apparatus CONT uses the display apparatus DY to display that theintegration value is about to exceed the first tolerance value. In placeof the display apparatus DY, a notification apparatus, capable ofnotifying various information by either or both of sound and light, maybe provided and that the integration value is about to exceed the firsttolerance value may be notified by means of either or both of sound andlight.

That is, with the present embodiment, a time limit is set for theassisting process by the operator according to the first tolerancevalue, and the control apparatus CONT is arranged to use the displayapparatus (notification apparatus) DY to perform display (make anotification) when the assisting process time limit is exceeded. Basedon the display results on the display apparatus DY (or the notificationresults of the notification apparatus), the operator moves the substratestage ST1 so that the immersion region LR and the substrate P separateand thereby moves the immersion region LR, for example, onto the uppersurface F1 of the substrate stage ST1.

By thus setting an operator-assisting process time limit according tothe first tolerance value and performing a display (notification) whenthe operator-assisting process time exceeds the assisting process timelimit, the problem of the integration value of the contact time duringwhich the liquid LQ of the immersion region LR and a shot region on thesubstrate P are in contact exceeding the first tolerance value can beprevented even during the operator-assisting process that is performedupon occurrence of an alignment error.

The control apparatus CONT may be arranged to perform a display(notification) after the integration value of the contact time duringwhich the liquid LQ of the immersion region LR and a shot region on thesubstrate P are in contact exceeds the first tolerance value during theoperator-assisting process. In this case, based on the measurementresults of the laser interferometer 54, the control apparatus CONT maystore information of the shot region, with which the integration valueof the time of contact with the liquid LQ has exceeded the firsttolerance value, in the storage apparatus MRY. Then in a subsequentprocess, a predetermined measure can be applied to the shot region, withwhich the integration value of the time of contact with the liquid LQhas exceeded the first tolerance value, based on the stored informationin the storage apparatus MRY. For example, the shot region, with whichthe integration value of the time of contact with the liquid LQ hasexceeded the first tolerance value, can be discarded, or the exposureprocess for exposing a pattern to be formed on an upper layer of theshot region can be omitted. Continued execution of predeterminedprocesses on the substrate P (shot region), with which a desired patterncannot be formed, can thereby be prevented.

Although with the fifth embodiment, a time limit, in accordance with thefirst tolerance value related to the integration value of the contacttime during which the liquid LQ of the immersion region LR and a shotregion on the substrate P are in contact is set in theoperator-assisting process, a time limit, in accordance with the secondtolerance value related to the stationary time during which the edge LGof the immersion region LR is substantially stationary on the substrateP, may also, be set. In this case, in order to prevent the stationarytime during which an edge LG of the immersion region LR is substantiallystationary on the substrate P from exceeding the second tolerance value,the control apparatus CONT can take measures such as cautioning theoperator by performing a display (notification) using the displayapparatus (notification apparatus) DY. Also, when the stationary timeduring which an edge LG of the immersion region LR is substantiallystationary on the substrate P, exceeds the second stationary value,predetermined measures, such as discarding the substrate P, can be takenin subsequent processes.

Sixth Embodiment

A sixth embodiment shall now be described. In this embodiment, when,during a runup operation (including accelerated movement) forscan-exposing a certain shot region on the substrate P, an error of theposition of the substrate P (including a planar position (position inthe Z-axis, θX, and θY directions) of the top surface of the substrate Pand the position of the substrate P in the X-Y plane) exceeds apredetermined tolerance value or a problem occurs in positional controlof the substrate P, scan-exposure is not performed on the shot regionand the runup operation for performing scan-exposure on the shot regionis executed again. In the following description, an error state thatoccurs during the runup operation of the substrate P shall be referredto as a “synchronization error” where appropriate. Also, there-performing of the runup operation for scan-exposing the shot regionfor which a synchronization error has occurred shall be referred to as a“retry operation” where appropriate.

When the retry operation is executed, the integration value of the timeof contact with the liquid LQ becomes large not only for the shotregion, with which the synchronization error has occurred, but also, forshot regions in the surroundings of that shot region.

During the exposure operation and the retry operation on each shotregion on the substrate P, the position information of the substratestage ST1 is monitored by the laser interferometer 54. After theoccurrence of the synchronization error and until the retry operation isexecuted, the control apparatus CONT can take a measure, such astemporarily moving the immersion region LR to the upper surface F1 ofthe substrate stage ST1 to prevent the integration value of the contacttime during which the liquid LQ of the immersion region LR and a shotregion on the substrate P are in contact from exceeding the firsttolerance value.

Also, the control apparatus CONT may be arranged so that when theintegration value of the contact time during which the liquid LQ of theimmersion region LR and a shot region on the substrate P are in contactreaches a predetermined value with respect to the first tolerance value(when the integration value is about to exceed the tolerance value), adisplay (notification), indicating that the integration value is aboutto exceed the first tolerance value, is performed using the displayapparatus (notification apparatus) DY.

The control apparatus CONT can also, store information on a shot region,with which the integration value of the time of contact with the liquidLQ has exceeded the first tolerance value, in the storage apparatus MRY.In a subsequent process, a predetermined measure is applied to the shotregion, with which the integration value of the time of contact with theliquid LQ has exceeded the first tolerance value, based on the storedinformation in the storage apparatus MRY. For example, the shot region,with which the integration value of the time of contact with the liquidLQ has exceeded the first tolerance value, is discarded, or the exposureprocess for exposing a pattern to be formed on an upper layer of theshot layer is omitted. Continued execution of predetermined processes onthe substrate P (shot region), with which a desired pattern cannot beformed, can thereby be prevented.

With the sixth embodiment, preferably when a circumstance in which therelative position of the substrate P and the immersion region LR issubstantially stationary occurs, the control apparatus CONT takesmeasures, such as continuing to move the substrate P on the substratestage ST1 with respect to the immersion region LR, etc., to prevent thestationary time during which an edge LG of the immersion region LR issubstantially stationary on the substrate P from exceeding the secondtolerance value after the occurrence of the synchronization error anduntil the retry operation is executed. Also, in a case where thestationary time during which the edge LG of the immersion region LR issubstantially stationary on the substrate P, exceeds the secondtolerance value, a predetermined measure, such as discarding thesubstrate P, can be performed in a subsequent process.

As in the sixth embodiment, it is preferable to store the position ofthe substrate stage ST1 based on the output of the laser interferometer54, etc., and respectively measure and store the time of contact of eachshot region on the substrate P with the liquid LQ even when performingactual exposure of the substrate P. It can thereby judged, when apattern defect, etc., occurs in a certain shot region, whether or notthe pattern defect is due to the time of contact with the liquid LQ.

Seventh Embodiment

A seventh embodiment shall now be described. Although processesperformed upon occurrence of an alignment error and upon occurrence of asynchronization error were described above with the fifth and sixthembodiments, various errors besides these may occur with the exposureapparatus EX. When an error occurs, the driving of the substrate stageST1 stops, and the occurrence of an error is displayed (notified) by thedisplay apparatus (notification apparatus) DY. Even upon occurrence ofthe error, the operations of supplying and recovering the liquid LQ bythe immersion mechanism 1 continue. The error that occurs here is anerror such that an influence is not applied to the exposure apparatus EXeven if the operations of supplying and recovering the liquid LQ by theimmersion mechanism 1 continue.

When an error occurs, a circumstance may arise in which operation ishalted until an input operation is performed by an operator via apredetermined input apparatus (for example, a keyboard, touch panel,etc.) is awaited. For example, the operator can input an instructionconcerning a restoration operation via an input device. Although thereis a possibility that the liquid LQ of the immersion region LR and ashot region on the substrate P may be in contact for a long time in theinterval from the occurrence of error to the performing of the inputoperation by the operator, the control apparatus CONT monitors theposition information of the substrate stage ST1 by means of the laserinterferometer 54 even when an error occurs. That is, even when an erroroccurs, the control apparatus CONT uses the laser interferometer 54 tomeasure the relative positional relationship of the substrate P and theimmersion region LR.

When upon occurrence of error (in the interval from the occurrence oferror to the performing of the input operation by the operator), theintegration value of the contact time during which the liquid LQ of theimmersion region LR and a shot region on the substrate P are in contactreaches a predetermined value with respect to the first tolerance value(when the integration value is about to exceed the first tolerancevalue), the control apparatus CONT can use the display apparatus(notification apparatus) DY to display (notify) that the integrationvalue is about to exceed the first tolerance value. Also, the operatorcan, by an assisting process, move the substrate stage ST1 to separatethe immersion region LR and the substrate P and thereby move theimmersion region LR, for example, onto the upper surface F1 of thesubstrate stage ST1 to prevent the integration value from exceeding thefirst tolerance value. If possible in this case, the control apparatusCONT may move the substrate stage ST1 to separate the immersion regionLR and the substrate P and move the immersion region LR, for example,onto the upper surface F1 of the substrate stage ST1.

Thus even if an error occurs with the exposure apparatus EX, the problemof the integration value of the contact time during which the liquid LQof the immersion region LR and a shot region on the substrate P are incontact exceeding the first tolerance value can be prevented by drivingthe substrate stage ST1.

Also, the control apparatus CONT can store information of a shot region,with which the integration value of the time of contact with the liquidLQ has exceeded the first tolerance value, in the storage apparatus MRY.In a subsequent process, a predetermined measure is applied to the shotregion, with which the integration value of the time of contact with theliquid LQ has exceeded the first tolerance value, based on the storedinformation in the storage apparatus MRY.

With the seventh embodiment, preferably when a circumstance in which therelative position of the substrate P and the immersion region LR issubstantially stationary occurs, the control apparatus CONT takesmeasures, such as continuing to move the substrate P on the substratestage ST1 with respect to the immersion region LR, etc., to prevent thestationary time during which the edge LG of the immersion region LR issubstantially stationary on the substrate P from exceeding the secondtolerance value, for example, in the interval from the occurrence oferror to the performing of the input operation by the operator or untilrestoration from the error is achieved. With the above-described fifthto seventh embodiments, the notification made upon occurrence of errormay be made to a host computer that manages a device manufacturingprocess, etc.

Although with the above-described first to seventh embodiments, theactual exposure conditions of the substrate P are determined so that thetimes of contact of the liquid LQ of the immersion region LR and therespective shot region on the substrate P do not exceed the firsttolerance value, the times of contact of the liquid LQ and therespective shot regions are preferably made as equal as possible.

Also, with the above-described first to seventh embodiments, in a casewhere it can be predicted that, with a portion of the shot regions, thetimes of contact with the liquid LQ will exceed the first tolerancevalue and that patterns of abnormal size (line width) will be formed onthis portion of the shot regions, the dose amount (integrated exposureamount by the exposure light EL) for this portion of the shot regionsmay be adjusted so that patterns of the designed size (line width) areformed.

Eighth Embodiment

Depending on the state (shape) of the immersion region LR, there is apossibility that regardless of continuously moving the substrate P withrespect to the immersion region LR, the relative position of thesubstrate P and an edge LG of the immersion region LR practically doesnot change. For example, if, in a case of performing relative movementof the immersion region LR and the substrate P in a predetermineddirection, the immersion region LR is of a shape in plan view that has aside (edge LG) that is substantially parallel to the predetermineddirection, the edge LG of the immersion region LR may continue to bestationary on a partial region of the substrate P even when theimmersion region LR and the substrate P are moved relative to eachother. For example, in a case where the immersion region LR is of arectangular shape, having a side (edge LG) that is substantiallyparallel to the Y-axis direction, in plan view as shown in FIG. 7, etc.,if the immersion region LR and the substrate P are moved relative toeach other in the Y-axis direction, the side (edge LG) of the immersionregion LR parallel to the Y-axis direction continues to be practicallystationary on a partial region of the substrate P even when theimmersion region LR and the substrate P are moved relative to eachother. In this case, the longer the length of the side (edge LG) of theimmersion region LR parallel to the Y-axis direction, the longer thetime during which the side (edge LG) of the immersion region LR parallelto the Y-axis direction remains stationary on the partial region of thesubstrate P, thus leading to the possibility of attachment of foreignmatter (particles) onto the partial region of the substrate P as wasdescribed with reference to FIG. 13, etc. In the same manner, in a casewhere the immersion region LR and the substrate P are moved relative toeach other in the X-axis direction, if the immersion region LR has aside (edge LG) that is substantially parallel to the X-axis direction,the side (edge LG) of the immersion region LR parallel to the X-axisdirection may continue to be practically stationary on a partial regionof the substrate P.

Thus in a case where the substrate P and the immersion region LR aremoved relative to each other in a predetermined direction, by making theshape in plan view of the immersion region LR a shape without a side(edge LG) parallel to the predetermined direction or a shape, with whichthe length of the side (edge LG) is adequately short, a partial regionof the substrate P and the edge LG of the immersion region LR can beprevented from continuing to be in contact, and the stationary timeduring which the edge LG of the immersion region LR is substantiallystationary on the substrate P, can be suppressed from becoming long evenif the substrate P and the immersion region LR are moved relative toeach other in the predetermined direction. For example, by making theshape of the immersion region LR in plan view a rhomboid shape as shownin the schematic view of FIG. 16 and thereby making a side (edge LG)parallel to a direction (X-axis direction or Y-axis direction), in whichthe substrate P and the immersion region LR are moved relative to eachother, adequately short, a partial region of the substrate P and theedge LG of the immersion region LR can be prevented from continuing tobe practically in contact even if the substrate P and the immersionregion LR are moved relative to each other in a predetermined direction(X-axis direction or Y-axis direction).

The shape of the immersion region LR described with reference to FIG. 16is just one example, and a circular shape, polygonal shape, or otherarbitrary shape may be employed as long as, in cases where the substrateP and the immersion region LR are moved relative to each other in apredetermined direction, the shape does not have a side (edge LG)parallel to the predetermined direction or the shape is such that thelength of a side (edge LG) in the predetermined direction is adequatelyshort.

Needless to say, in a case where the immersion region LR has a straightedge of a certain length, it is preferable to avoid relative movement ofthe immersion region LR and the substrate P in a direction parallel tothe straight edge or to make such relative movement as short as possiblein either or both the movement distance and the movement time.

A partial region of the substrate P and an edge LR of the immersionregion LR can also, be prevented from continuing to be practically incontact by optimizing the structure of the nozzle member 70 and varyingthe position of the edge LG of the immersion region LR. FIG. 17 is aview as viewed from below of an example of a nozzle member 70, withwhich the position of an edge LG of the immersion region LR can bevaried. In FIG. 17, the nozzle member 70 is disposed so as to surroundthe final optical element LS1. At the bottom surface of the nozzlemember 70, the plurality of supply ports 12 are disposed so as tosurround the optical path space K1 (projection region AR). In theexample shown in FIG. 17, each of the supply ports 12 has an arcuate,slit-like shape in plan view, and the arcuate, slit-like supply ports 12are disposed so as to surround the optical path space K1. Also, on thebottom surface of the nozzle member 70, an annular first collection port22A is disposed so as to surround the optical path space K1 and thesupply ports 12. Furthermore on the bottom surface of the nozzle member70, an annular second collection port 22B is disposed so as to surroundthe first collection port 22A. A porous member is disposed at each ofthe first collection port 22A and the second collection port 22B. Arecovery passage and a recovery pipe connected to the first collectionport 22A and a recovery passage and a recovery pipe connected to thesecond collection port 22B are independent of each other, and theimmersion mechanism 1 can perform a liquid recovery operation via thefirst collection port 22A and a liquid recovery operation via the secondcollection port 22B independently of each other.

In controlling operations of the immersion mechanism 1 to perform anoperation of recovering the liquid LQ via the second collection port22B, the control apparatus CONT stops an operation of recovering theliquid LQ via the first collection port 22B to form an immersion regionLR that is in accordance with the size and shape of the secondcollection port 22B. In this process, the control apparatus CONTcontrols operations of the immersion mechanism 1 to supply the liquid LQof an amount that is in accordance with the second collection port 22Bfrom the supply ports 12. Also, by controlling operations of theimmersion mechanism 1 to perform the operation of recovering the liquidLQ via the first collection port 22A, the control apparatus CONT canform an immersion region LR that is in accordance with the size andshape of the first collection port 22A. In this process, the controlapparatus CONT controls operations of the immersion mechanism 1 tosupply the liquid LQ of an amount that is in accordance with the firstcollection port 22A from the supply ports 12.

By illuminating the exposure light EL on the substrate P while movingthe substrate P with respect to the exposure light EL while switchingbetween performing the liquid recovery operation via the firstcollection port 22A and performing the liquid recovery operation via thesecond collection port 22B, the control apparatus CONT can vary theposition of the edge LG of the immersion region LR during thescan-exposure of the substrate P. By thus varying the liquid recoveryposition by switching between performing the liquid recovery operationvia the first collection port 22A and performing the liquid recoveryoperation via the second collection port 22B, a partial region of thesubstrate P and the edge LG of the immersion region LR can be preventedfrom continuing to be practically in contact even when the substrate Pand the immersion region LR are moved in a predetermined direction.

The nozzle member 70 described with reference to FIG. 17 is just anexample, and any structure may be employed as long as it is a structureby which the position of an edge LG of the immersion region LR can bechanged. For example, the nozzle member 70 may be supported by apredetermined supporting mechanism having a predetermined drivemechanism that can drive the nozzle member 70 with respect to theoptical path space K1. Because the positions of the supply ports 12(liquid supply positions) and the positions of the collection ports 22(liquid recovery positions) with respect to the optical path space K1can be changed by moving the nozzle member 70 itself, the position of anedge LG of the immersion region LR can be adjusted. And by performingexposure while moving the substrate P while changing the position of thenozzle member 70, a partial region of the substrate P and an edge LG ofthe immersion region LR can be prevented from continuing to bepractically in contact.

With the above-described first to eighth embodiments, the movement pathof the immersion region LR on the substrate P, that is, the movementlocus of the substrate P with respect to the immersion region LR fromafter the loading of the substrate P onto the substrate stage ST1 to theunloading of the substrate P from the substrate stage ST1 is preferablymonitored and stored. Whether or not there is a causal relationshipbetween a pattern defect distribution on the substrate P and themovement path of the immersion region LR on the substrate P can therebybe judged.

Ninth Embodiment

With the present embodiment, an example of transferring a pattern ontothe substrate P using a mask M having a plurality of pattern formationregions (in this case, nine), in each of which a pattern is formed asshown in FIGS. 18A and 18B, shall be described.

In FIG. 18A, the plurality of (nine) pattern formation regions “a” to“i”, in each of which a pattern is formed, is set on the mask M. On themask M, the pattern formation regions “a” to “i” are mutually spacedapart by predetermined intervals and set in a matrix-like form. Also, onthe mask M, the pattern formation regions “a” to “i” are comparativelysmall regions and regions other than the pattern formation regions “a”to “i” are covered by a light shielding film of chromium, etc.

Each of the pattern formation regions “a” to “i” is provided with firstline-and-space patterns (first L/S patterns) LP1, in each of which aplurality of line patterns, having the Y-axis direction as thelongitudinal direction, are aligned at predetermined intervals in theX-axis direction, and second line-and-space patterns (second L/Spatterns) LP2, in each of which a plurality of line patterns, having theX-axis direction as the longitudinal direction, are aligned atpredetermined intervals in the Y-axis direction, as shown in FIG. 18B.

In transferring the first and second L/S patterns LP1 and LP2, formed ineach of the pattern formation regions “a” to “i” on the mask M, onto thesubstrate P, the respective first and second L/S patterns LP1 and LP2 ofthe pattern formation regions “a” to “i” formed on the mask M areexposed onto the substrate P while synchronously moving the mask M andthe substrate P in the Y-axis direction as in the respective embodimentsdescribed above.

FIG. 19 shows a manner in which the respective first and second L/Spatterns LP1 and LP2 of the pattern formation regions “a” to “i” on themask M are transferred onto the substrate P by a first scan-exposure. Asshown in FIG. 19, by the first scan exposure, the respective first andsecond L/S patterns LP1 and LP2 of the pattern formation regions “a” to“i” on the mask M are transferred onto a predetermined region (firstregion) 101 of the substrate P.

Here, for the sake of simplicity, the respective pattern formationregions on the mask M that include the first and second L/S patterns LP1and LP2 shall be referred to as “mask-side patterns a to i” wheresuitable, and the respective pattern formation regions (shot regions) onthe substrate P, including the first and second L/S patterns LP1 and LP2transferred onto the substrate P, shall be referred to as“substrate-side patterns a to i” where suitable in the description thatfollows.

By the mask-side patterns “a” to “i” being transferred onto thesubstrate P, the substrate-side patterns “a” to “i”, which are mutuallyspaced apart by predetermined intervals and set in a matrix-like form,are formed on the substrate P. As in the above-described embodiments,the immersion region LR is formed locally on a partial region of thesubstrate P so as to cover the projection region AR. Also, the immersionregion LR is formed so as to cover the first region 101 in which thesubstrate-side patterns “a” to “i” are formed.

With the present embodiment, the mask-side patterns “a” to “i” aretransferred by a second scan-exposure onto positions adjacent thesubstrate-side patterns “a” to “i” that have been transferred onto thesubstrate P by the first scan-exposure. The mask-side patterns “a” to“i” are then transferred by a third scan-exposure onto positionsadjacent the substrate-side patterns “a” to “i” that have beentransferred onto the substrate P by the second scan-exposure. Theoperation of transferring the mask-side patterns “a” to “i” by asubsequent scan exposure onto positions adjacent the substrate-sidepatterns “a” to “i” that have been transferred onto the substrate P by ascan-exposure performed before are then repeated to form a plurality ofthe substrate-side patterns “a” to “i” on the substrate P. With thepresent embodiment, the scan exposure is repeated nine times. Nine ofeach of the substrate-side patterns “a” to “i” are thus formed on thesubstrate P.

Also, in each of the plurality of scan-exposures, the control apparatusCONT transfers the mask-side patterns “a” to “i” onto the substrate Pwhile changing the exposure conditions. Specifically, the controlapparatus CONT transfers the mask-side patterns “a” to “i” onto thesubstrate P while changing, for example, either or both the image planeposition resulting from the projection optical system PL and the liquidLQ (the positional relationship in the Z-axis direction of the imageplane of the projection optical system PL and the top surface of thesubstrate P) and the illumination amount (exposure dose) of the exposurelight EL, etc. The shapes (including sizes, such as the ling widths,etc.) of the substrate-side patterns “a” to “i” formed on the substrateP are then evaluated, and optimal exposure conditions are derived basedon the evaluation results. That is, with the present embodiment, a testexposure for determining the exposure conditions is performed using themask M with the mask-side patterns “a” to “i”.

FIG. 20 is a diagram showing a positional relationship of the substrateP and the immersion region LR after the first scan-exposure has endedand before the second scan-exposure has started. After the firstscan-exposure has ended, the control apparatus CONT returns the maskstage MST, which holds the mask M, to the scan starting position for thesecond scan-exposure. While moving the mask stage MST to return the maskstage MST to the scan starting position or before or after this movementof the mask stage MST, the control apparatus CONT drives the substratestage ST1 and moves the immersion region LR to the position shown inFIG. 20 with respect to the substrate P. That is, the control apparatusCONT moves the immersion region LR from the first region 101 of thesubstrate P that was in contact with the liquid LQ of the immersionregion LR during the first scan-exposure to a second region 102 on thesubstrate P other than the first region 101. After moving the immersionregion LR to the second region 102, the control apparatus CONT maintainsthis state for a predetermined time.

After the predetermined time has elapsed, the control apparatus CONTdrives the substrate stage ST1 and moves the immersion region LR to thefirst region 101 to perform the second scan-exposure. FIG. 21 is adiagram showing the manner in which the next mask-side patterns “a” to“i” are transferred, by the second scan -exposure, onto positionsadjacent the substrate-patterns “a” to “i” that were transferred ontothe substrate P before. The control apparatus CONT transfers thepatterns of the mask M onto the first region 101 of the substrate Pwhile synchronously moving the mask M and the substrate P in the Y-axisdirection in the same manner as when performing the first scan-exposure.

When the second scan-exposure has ended, the control apparatus CONTdrives the substrate stage ST1 to move the immersion region LR to thesecond region 102 and maintains this state for the predetermined time.After the predetermined time has elapsed, the control apparatus CONTdrives the substrate stage ST1 and moves the immersion region LR to thefirst region 101 to perform the third scan-exposure. The controlapparatus CONT transfers the patterns of the mask M onto the firstregion 101 of the substrate P while synchronously moving the mask M andthe substrate P in the Y-axis direction in the same manner as whenperforming the first scan-exposure and the second scan-exposure.

By repeating the above operations a predetermined number of times (ninetimes in the present example), that is, by repeating the operation oftransferring the mask-side patterns “a” to “i” by a subsequentscan-exposure onto positions adjacent the substrate-side pattern “a” to“i” that have been transferred before onto the substrate P, theplurality of substrate-side patterns “a” to “i” are transferred onto thesubstrate P.

By thus transferring the mask-side patterns “a” to “i” a plurality oftimes onto the comparatively small first region 101 on the substrate Pwhile changing the exposure conditions, the shapes of the patternsformed by the test exposure can be evaluated in a state in whichinfluences of the flatness of the substrate P are suppressed.

As described above, with the present embodiment, after a priorscan-exposure has ended and before a subsequent scan-exposure hasstarted, the immersion region LR is moved once from the first region 101of the substrate P, onto which patterns are transferred by illuminationof the exposure light EL, to the second region 102 other than the firstregion 101. Then after the immersion region LR has been moved to thesecond region 102 and the predetermined time has elapsed, the immersionregion LR is moved to the first region 101 for the next scan exposure.

If, for example, the second scan-exposure is performed immediately afterthe first scan-exposure has ended, because the subsequent illuminationoperation of the exposure light EL is performed before the first region101, which has been heated by the illumination heat of the exposurelight EL, is cooled, the pattern transfer precision may be degraded.Thus preferably, a waiting time, for compensating for the temperaturerise of the substrate P, is set after the first scan-exposure has endedand before the second scan exposure has started. However, in anarrangement with which the cooling of the first region 101 is awaitedwith the immersion region LR being formed on the first region 101, theintegration value of the contact time during which the liquid LQ of theimmersion region LR and the first region 101 on the substrate P are incontact, becomes large. Also, because the mask-side patterns “a” to “i”are transferred a plurality of times onto the comparatively small firstregion 101 of the substrate P, if the immersion region LR is not movedto the second region 102 after exposure of the first region 101, only aslight movement (stepping movement) of the substrate P will suffice. Theintegration value of the contact time during which the liquid LQ of theimmersion region LR and the first region 101 on the substrate P are incontact, thus becomes large and a state, in which an edge LG of theimmersion region LR is substantially stationary on the substrate P, isentered.

Thus by moving the immersion region LR to the second region afterexposure of the first region 101 and maintaining this state for thepredetermined time, the integration value of the contact time duringwhich the liquid LQ of the immersion region LR and the first region 101on the substrate P are in contact, can be reduced and exposure of thenext mask-side patterns “a” to “i” onto the first region 101 can beperformed in a state in which the influences of the illumination heat ofthe exposure light EL due to the prior scan-exposure are reduced.

Although with the present embodiment, the immersion region LR is movedto the second region 102 other than the first region 101 on thesubstrate P after exposure of the first region 101 on the substrate P,the mask-side patterns “a” to “i” may be transferred onto the secondregion 102 when the immersion region LR has been moved to the secondregion 102.

Also, after exposing the first region 101 on the substrate P, theimmersion region LR may be moved onto the upper surface F1 of thesubstrate stage ST1 or the upper surface F2 of the measurement stage ST2without moving it to the second region 102 other than the first region101 on the substrate P.

As described above, with the respective embodiments, pure water is usedas the liquid LQ. Pure water provides the merits that large amounts canbe procured readily in a semiconductor manufacturing plant, etc., andadverse effects are not applied to the photoresist on the substrate P aswell as on the optical elements (lens), etc. Also, because pure waterdoes not apply adverse effects on the environment and is extremely lowin impurity content, actions of washing the top surface of the substrateP and the surface of the optical element disposed at the front endsurface of the projection optical system PL can also, be anticipated. Ifthe purity of the pure water supplied from the plant, etc., is low, theexposure apparatus may be provided with an ultrapure water productionsystem.

The refractive index n of pure water (n) with respect to the exposurelight of a wavelength of approximately 193 nm is the to be approximately1.44, and when an ArF excimer laser light (wavelength: 193 nm) is usedas the light source of the exposure light EL, the wavelength isshortened by 1/n, that is, to approximately 134 nm on the substrate Pand thus a high resolution can be obtained. Furthermore, because thedepth of focus is magnified by approximately n times, that is, byapproximately 1.44 times, if it is sufficient to secure a depth of focusof the same level as that in use in air, the aperture number of theprojection optical system PL can be increased further and the resolutioncan be improved from this aspect as well.

In each of the above-described embodiments, the optical element LS1 ismounted to the front end of the projection optical system PL, and thisoptical element LS1 can be used to adjust the optical characteristics,for example, the aberration (spherical aberration, coma aberration,etc.), of the projection optical system PL. An optical plate, used foradjustment of the optical characteristics of the projection opticalsystem PL, may also, be used as the optical element mounted to the frontend of the projection optical system PL. Also, the optical elementmounted to the front end may be a plane-parallel plate (cover plate orthe like) that can transmit the exposure light EL.

In the case where the pressure that arises between the substrate P andthe optical element at the front end of the projection optical system PLdue to the flow of the liquid LQ is large, instead of making the opticalelement replaceable, the optical element may be fixed securely so as notto be moved by the pressure.

In regard to the structure of the immersion mechanism 1 including thenozzle member 70, the present invention is not restricted to theabove-described structures, and for example, structures described inEuropean Patent Publication No. 1420298, PCT International PatentPublication No. 2004/055803, PCT International Patent Publication No.2004/057590, and PCT International Patent Publication No. 2005/029559may be employed as well.

Although in the above-described embodiments, the liquid LQ is filledbetween the projection optical system PL and the top surface of thesubstrate P, for example, a cover glass, constituted of a plane-parallelplate, may be mounted onto the top surface of the substrate P and theliquid LQ may instead be filled at least between the top surface of thecover glass and the projection optical system PL.

Also, although with the projection optical system of each of theabove-described embodiments, the optical path space at the image planeside of the optical element (LS1) at the front end is filled with theliquid, a projection optical system, with which an optical path space atan object surface side of the optical element at the front end is also,filled the liquid, may be employed as well, as disclosed in PCTInternational Publication No. WO 2004/019128.

Although the liquid LQ of the above-described embodiments is water (purewater), the liquid LQ may be a liquid other than water. For example, ifthe light source of the exposure light EL is an F₂ laser, because thisF₂ laser light is not transmitted through water, the liquid LQ may, forexample, be a fluorocarbon fluid such as a perfluoropolyether (PFPE) ora fluorocarbon oil that can transmit the F₂ laser light. In this case,portions that contact the liquid LQ are lyophilized by forming a thinfilm, for example, from a substance with a small, polar molecularstructure that contains fluorine. Liquids (for example, cedar oil) otherthan the above that transmit the exposure light EL, have a refractiveindex as high as possible, and are stable with respect to the projectionoptical system PL and the photoresist coated on the top surface of thesubstrate P may be used as the liquid LQ.

Also, as the liquid LQ, that with a refractive index of approximately1.6 to 1.8 may be used. Furthermore, the optical element LS1 may beformed of quartz or other material with a refractive index higher thanthat of fluorite (for example, a refractive index no less than 1.6). Asthe liquid LQ, any of various liquids, such as a supercritical fluid,may be used.

Although in the respective embodiments described above, the respectiveposition information of the mask stage MST, substrate stage ST1, andmeasurement stage ST2 are measured using an interferometry system (52,54, 56), the present invention is not limited thereto and, for example,an encoder system that detects scales (diffraction gratings) disposed onthe respective stages may be used instead. In this case, preferably ahybrid system, having both an interferometry system and an encodersystem, is arranged and the measurement results of the encoder systemare calibrated using the measurement results of the interferometrysystem. Also, positional control of the stages may be performed usingthe interferometry system and the encoder system switchingly or usingboth systems at the same time.

As the substrate P of each of the above-described embodiments, not onlya semiconductor wafer for manufacturing a semiconductor device, butalso, a glass substrate for a display device, a ceramic wafer for a thinfilm magnetic head, or a master mask or reticle (synthetic quartz orsilicon wafer) used in the exposure apparatus, etc., can be used.

In regard to the exposure apparatus EX, besides a scan type exposureapparatus (scanning stepper), with which the pattern of the mask M isscan-exposed while synchronously moving the mask M and the substrate P,the present invention can also, be applied to a step-and-repeat typeprojection exposure apparatus (stepper), with which the patterns of themask M are exposed in a batch with the mask M and the substrate P beingstationary, and the substrate P is then moved successively in stepwisemanner.

Also, in regard to the exposure apparatus EX, the present invention canbe applied to an exposure apparatus of an arrangement, in which areduced image of a first pattern is exposed in a batch on the substrateP by using a projection optical system (for example, a refractiveprojection optical system having a reduction magnification of ⅛ thatdoes not include a reflecting element), with the first pattern and thesubstrate P being substantially stationary. In this case, the presentinvention can be also, applied to a stitch type batch exposureapparatus, in which after the reduced image of the first pattern isexposed in a batch, a reduced image of a second superimposed pattern isexposed in a batch on the substrate P in a manner that is partiallyoverlapped with the first pattern by using the projection opticalsystem, with the second pattern and the substrate P being substantiallystationary. In regard to the stitch type exposure apparatus, the presentinvention can also, be applied to a step-and-stitch type exposureapparatus, in which at least two patterns are transferred onto thesubstrate P in a partially superimposing manner and the substrate P ismoved successively.

Also, although an exposure apparatus, having the projection opticalsystem PL, was described as an example with each of the embodimentsabove, the present invention can also, be applied to an exposureapparatus and an exposure method that does not use a projection opticalsystem PL. Even in cases where a projection optical system is not used,an exposure light is illuminated onto a substrate via a mask or a lensor other optical member and an immersion region is formed in apredetermined space between such an optical member and the substrate.

The present invention can also, be applied to a twin stage type exposureapparatus, having a plurality of substrate stages, as disclosed, forexample, in Japanese Patent Application Publication No. H10-163099 andJapanese Patent Application Publication No. H10-214783 (correspondingU.S. Pat. No. 6,590,634), Published Japanese Translation No. 2000-505958of the PCT International Publication (corresponding U.S. Pat. No.5,969,441), and U.S. Pat. No. 6,208,407.

The present invention can also, be applied to an exposure apparatus thatdoes not have a measurement stage such as the exposure apparatusdisclosed in PCT International Publication No. WO 99/49504 Pamphlet. Thepresent invention can also, be applied to an exposure apparatus having aplurality of substrate stages and measurement stages.

Also, although in the above-described embodiments, an exposureapparatus, with which a liquid is locally filled between the projectionoptical system PL and the substrate P, is employed, the presentinvention can also, be applied to a liquid immersion exposure apparatus,with which exposure is performed with the entire top surface of thesubstrate to be exposed being immersed in a liquid, as disclosed forexample in Japanese Patent Application Publication No. H06-124873,Japanese Patent Application Publication No. H10-303114, and U.S. Pat.No. 5,825,043.

The types of exposure apparatuses EX are not limited to exposureapparatuses for semiconductor element manufacture that expose asemiconductor element pattern onto a substrate P, and the presentinvention is also, widely applicable to exposure apparatuses for themanufacture of liquid crystal display elements and for the manufactureof displays, and exposure apparatuses for the manufacture of thin filmmagnetic heads, image pickup elements (CCD), micro machines, MEMS, DNAchips, and reticles or masks.

Although in the above-described embodiments, an optical transmissiontype mask, in which a predetermined light-shielding pattern (or phasepattern or dimming pattern) is formed on an optical transmissionsubstrate, is used, instead of this mask, for example, an electronicmask (called a variable form mask; for example, this includes a DMD(Digital Micro-mirror Device), which is a type of non-radiative typeimage display element) for forming a transmission pattern or reflectionpattern, or a light emitting pattern, based on electronic data of apattern to be exposed as disclosed in U.S. Pat. No. 6,778,257, may beused.

Furthermore the present invention can also, be applied to an exposureapparatus (lithography system), which exposes a line-and-space patternon a substrate P by forming interference fringes on the substrate P, asdisclosed for example in PCT International Publication No. WO2001/035168.

Moreover, the present invention can also, be applied to an exposureapparatus as disclosed for example in Published Japanese Translation No.2004-519850 of the PCT International Publication (corresponding U.S.Pat. No. 6,611,316), which synthesizes patterns of two masks on asubstrate via a projection optical system, and double exposes a singleshot region on the substrate at substantially the same time using asingle scan exposure.

As far as is permitted by the law of the countries specified or selectedin this International Patent Application, the disclosures in all of theJapanese Patent Publications and U.S. Patents related to exposureapparatuses and the like cited in the above respective embodiments andmodified examples are incorporated herein by reference.

As described above, the exposure apparatus EX of each of the embodimentsof this application is manufactured by assembling various subsystems,including the respective components presented in the claims of thepresent application, so as to maintain the prescribed mechanicalprecision, electrical precision and optical precision. To ensure theserespective precisions, adjustments for achieving optical precision withrespect to the various optical systems, adjustments for achievingmechanical precision with respect to the various mechanical systems, andadjustments for achieving electrical precision with respect to thevarious electrical systems are performed before and after the assembly.The process of assembly from the various subsystems to the exposureapparatus includes mechanical connections, electrical circuit wiringconnections, air pressure circuit piping connections, etc., among thevarious subsystems. Obviously, before the process of assembly from thesevarious subsystems to the exposure apparatus, there are the processes ofindividual assembly of the respective subsystems. When the process ofassembly to the exposure apparatuses of the various subsystems hasended, overall assembly is performed, and the various precisions areensured for the exposure apparatus as a whole. Preferably, themanufacture of the exposure apparatus is performed in a clean room inwhich the temperature, the degree of cleanliness, etc., are controlled.

As shown in FIG. 23, microdevices such as semiconductor devices aremanufactured through; a step 201 of performing microdevice function andperformance design, a step 202 of creating the mask (reticle) based onthis design step, a step 203 of manufacturing the substrate that is thedevice base material, a step 204 including substrate processing steps,such as a process of exposing the pattern on the mask onto a substrateby means of the exposure apparatus EX of the above-describedembodiments, a process of developing the exposed substrate, and aprocess of heating (curing) and etching the developed substrate, adevice assembly step (including treatment processes such as a dicingprocess, a bonding process and a packaging process) 205, and aninspection step 206, etc.

According to the present invention, a desired pattern can be formed on asubstrate and a device having a desired performance can be manufactured.The present invention is thus extremely useful in an exposure apparatusand method for manufacturing a wide range of products includingsemiconductor elements, liquid crystal display elements or displays,thin film magnetic heads, CCDs, micro machines, MEMS, DNA chips, andreticles (masks).

1. An exposure method, comprising: forming an immersion region on asubstrate by supplying a liquid; measuring a contact time during whichthe liquid and the substrate are in contact; discarding the substratewhen the contact time exceeds a tolerance value; and generating anotification that the contact time is about to exceed the tolerancevalue before the contact time exceeds the tolerance value.
 2. Theexposure method according to claim 1, wherein the contact time isintegrated during an assisting process for recovering an error.
 3. Theexposure method according to claim 1, wherein the contact time includesa stationary time during which at least a portion of the immersionregion is substantially stationary on the substrate.
 4. An exposureapparatus which exposes a substrate via an immersion region, comprising:an immersion mechanism which forms the immersion region by supplying aliquid; a control apparatus which integrates a contact time during whichthe liquid and the substrate are in contact and discards the substratewhen the contact time exceeds a tolerance value, wherein the controlapparatus generates a notification that the contact time is about toexceed the tolerance value before the contact time exceeds the tolerancevalue.
 5. The exposure apparatus according to claim 4, wherein thecontrol apparatus integrates the contact time during an assistingprocess for recovering an error.
 6. The exposure apparatus according toclaim 4, wherein the contact time includes a stationary time duringwhich at least a portion of the immersion region is substantiallystationary on the substrate.
 7. An exposure method, comprising: formingan immersion region on a substrate; and exposing the substrate via aliquid of the immersion region while moving the substrate in a firstdirection; wherein, a contact area of the immersion region with asurface of the substrate comprises a shape having opposing cornersfacing each other along the first direction and having the otheropposing corners facing each other along a second direction whichintersects with the first direction.
 8. The exposure method according toclaim 7, wherein the outer shape of the contact area of the immersionregion with a surface of the substrate has a substantially rhomboidshape.
 9. The exposure method according to claim 7, further comprising:measuring an integration value of a contact time during which the liquidof the immersion region and a first region on the substrate are incontact; and discarding the substrate when the integration value exceedsa predetermined tolerance value.
 10. The exposure method according toclaim 7, wherein the substrate is held at a recess portion on a movablemember which is enabled to move while holding the substrate, and asurface of the substrate which is held by the recess portion and anupper surface of the movable member are substantially at an equalheight.
 11. The exposure method according to claim 7, furthercomprising: moving the immersion region from the substrate onto a secondmovable member by making the second movable member that differs from amovable member and the movable member be in contact or be close to eachother, in which the substrate is held by a recess portion on the movablemember which is enabled to move while holding the substrate.
 12. Anexposure method, comprising: forming an immersion region on a substrate;and exposing the substrate via a liquid of the immersion region whilemoving the substrate in a first direction; wherein, a contact area ofthe immersion region with a surface of the substrate comprises asubstantially polygonal shape having a line element between adjacentvertexes, the line element intersecting obliquely with the firstdirection.
 13. The exposure method according to claim 12, wherein thesubstantially polygonal shape has a substantially rhomboid shape. 14.The exposure method according to claim 12, further comprising: measuringan integration value of a contact time during which the liquid of theimmersion region and a first region on the substrate are in contact; anddiscarding the substrate when the integration value exceeds apredetermined tolerance value.
 15. The exposure method according toclaim 12, wherein the substrate is held at a recess portion on a movablemember which is enabled to move while holding the substrate, and asurface of the substrate which is held by the recess portion and anupper surface of the movable member are substantially at an equalheight.
 16. The exposure method according to claim 12, furthercomprising: moving the immersion region from the substrate onto a secondmovable member by making the second movable member that differs from amovable member and the movable member be in contact or be close to eachother, in which the substrate is held by a recess portion on the movablemember which is enabled to move while holding the substrate.
 17. Anexposure apparatus that exposes a substrate via a projection opticalsystem and an immersion region, comprising: a movable member that isenabled to move in a first direction while holding the substrate; and animmersion mechanism that forms the immersion region between thesubstrate and the projection optical system by supplying a liquid to animage plane side of the projection optical system; wherein, a contactarea of the immersion region with a surface of the substrate comprises ashape having opposing corners facing each other along the firstdirection and having the other opposing corners facing each other alonga second direction which intersects with the first direction.
 18. Theexposure apparatus according to claim 17, wherein the outer shape of thecontact area of the immersion region with the surface of the substratehas a substantially rhomboid shape.
 19. The exposure apparatus accordingto claim 17, wherein the immersion region is locally formed on thesubstrate.
 20. The exposure apparatus according to claim 17, furthercomprising: a control apparatus that measures an integration value of acontact time during which the liquid of the immersion region and a firstregion on the substrate are in contact.
 21. The exposure apparatusaccording to claim 20, wherein a plurality of shot regions set on thesubstrate are exposed successively, and the first region comprises atleast a partial region of at least one of the plurality of shot regions.22. The exposure apparatus according to claim 20, wherein the controlapparatus controls operations of the immersion mechanism such that theintegration value does not exceed the tolerance value.
 23. The exposureapparatus according to claim 17, wherein the substrate is held inside ofa recess portion of the movable member, and a surface of the substratewhich is held inside of the recess portion and an upper surface of themovable member are substantially at an equal height.
 24. The exposureapparatus according to claim 17, further comprising: a second movablemember that differs from the movable member; wherein, moving theimmersion region from the substrate onto the second movable member bymaking the second movable member and the movable member be in contact orbe close to each other, in which the substrate is held by a recessportion on the movable member which is enabled to move while holding thesubstrate.
 25. An exposure apparatus that exposes a substrate via aprojection optical system and an immersion region, comprising: a movablemember that is enabled to move in a first direction while holding thesubstrate; and an immersion mechanism that forms the immersion regionbetween the substrate and the projection optical system by supplying aliquid to an image plane side of the projection optical system; wherein,a contact area of the immersion region with a surface of the substratecomprises a substantially polygonal shape having a line element betweenadjacent vertexes, the line element intersecting obliquely with thefirst direction.
 26. The exposure apparatus according to claim 25,wherein the substantially polygonal shape has a substantially rhomboidshape.
 27. The exposure apparatus according to claim 25, wherein theimmersion region is locally formed on the substrate.
 28. The exposureapparatus according to claim 25, further comprising: a control apparatusthat measures an integration value of a contact time during which theliquid of the immersion region and a first region on the substrate arein contact.
 29. The exposure apparatus according to claim 28, wherein aplurality of shot regions set on the substrate are exposed successively,and the first region comprises at least a partial region of at least oneof the plurality of shot regions.
 30. The exposure apparatus accordingto claim 28, wherein the control apparatus controls operations of theimmersion mechanism such that the integration value does not exceed atolerance value.
 31. The exposure apparatus according to claim 25,wherein the substrate is held inside of a recess portion of the movablemember, and a surface of the substrate which is held inside of therecess portion and an upper surface of the movable member aresubstantially at an equal height.
 32. The exposure apparatus accordingto claim 25, further comprising: a second movable member that differsfrom the movable member; wherein, moving the immersion region from thesubstrate onto the second movable member by making the second movablemember and the movable member be in contact or be close to each other,in which the substrate is held by a recess portion on the movable memberwhich is enabled to move while holding the substrate.
 33. A devicemanufacturing method that employs the exposure apparatus according toclaim
 17. 34. A device manufacturing method that employs the exposureapparatus according to claim 25.